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MG1021-16

Description
40 GHz - 60 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
CategoryDiscrete semiconductor    diode   
File Size159KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

MG1021-16 Overview

40 GHz - 60 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE

MG1021-16 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
package instructionO-CUPM-N1
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationCONTINUOUS WAVE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsGALLIUM ARSENIDE
Diode typeGUNN DIODE
JESD-30 codeO-CUPM-N1
Number of components1
Number of terminals1
Typical operating current600 mA
Maximum operating frequency60 GHz
Minimum operating frequency40 GHz
Nominal operating voltage4 V
Minimum output power0.05 W
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
surface mountNO
technologyGUNN
Terminal formNO LEAD
Terminal locationUPPER
GUNN Diodes
TM
®
Cathode Heat Sink
MG1001 – MG1061
Discrete Frequency: Cathode Heatsink
Features
CW Designs to 500 mW
Pulsed Designs to 10 W
Frequency Coverage Specified from 5.9–95 GHz
Low Phase Noise
High Reliability
Applications
Motion Detectors
Transmitters and Receivers
Beacons
Automotive Collision Avoidance Radars
Radars
Radiometers
Instrumentation
Description
Microsemi’s GaAs Gunn diodes, epi-down (cathode
heatsink), are fabricated from epitaxial layers grown at
MSC by the Vapor Phase Epitaxy technique. The layers
are processed using proprietary techniques resulting in
low phase and 1/f noise. MDT Gunn diodes are
available in a variety of microwave ceramic packages
are available for operation from 5–110 GHz.
Copyright
2008
Rev: 2009-01-19
Microsemi
Microwave Products
Page 1
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
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