Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SPT5006 and SPT5008
Series
10 AMPS
100 Volts
High Power - High Speed
NPN Transistors
•
•
•
•
•
•
•
•
Features:
Radiation Tolerant
Fast Switching, 100 ns Maximum t
d
High Frequency, f
T
> 30MHz
BV
CEO
80 Volts Minimum
High Linear Gain, Low Saturation Voltage
200
o
C Operating Temperature
Designed for Complementary Use With
SPT5007 and SPT5009
TX, TXV, S-Level Screening Available.
Consult Factory.
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
T
J
& T
STG
R
0JC
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SPT5006 __ __ __
SPT5008 __ __ __
│ │ └
Screening
2/
__
= Not Screened
│ │
TX = TX Level
│ │
TXV = TXV Level
│ │
S = S Level
3/ 4/
│ └
Lead Bend
__ = Straight Leads
│
UB = Up Bend
│
DB = Down Bend
3
└
Package
/ /61 = TO-61
/3 = TO-3
M = TO-254
S1 = SMD1
Maximum Ratings
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T
C
= 50ºC
Derate Above 50ºC
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
Value
80
100
6
10
3
100
0.667
-65 to +200
1.5
Units
Volts
Volts
Volts
Amps
Amps
Watts
W/ºC
ºC
ºC/W
TO-61 (/61)
TO-3(/3)
TO-254 (M)
SMD1 (S1)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0113A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SPT5006 and SPT5008
Series
Symbol
(I
C
= 200 mA)
(I
C
= 200 µA)
(I
E
= 200 µA)
(V
CE
= 40 V)
(V
CE
= 60 V)
(V
CE
= 100 V)
(V
CE
= 60 V
,
V
BE
= 2 V, T
C
= 150ºC)
(V
EB
= 4 V)
(V
EB
= 5.5 V)
(I
C
= 100 mA, V
CE
= 5 V) 2N5006
2N5008
(I
C
= 5 A, V
CE
= 5 V) 2N5006
2N5008
(I
C
= 10 A, V
CE
= 5 V)2N5006
2N5008
(I
C
= 5 A, I
B
= 500 mA)
(I
C
= 10 A, I
B
= 500 mA)
(I
C
= 5 A, I
B
= 500 mA)
(I
C
= 10 A, I
B
= 1 A)
(V
CE
= 5 V, I
C
= 5 A)
(V
CE
= 5 V, I
C
= 0.5 A, f = 20
MHz)
2N5006
Electrical Characteristics
Collector – Emitter Blocking Voltage *
Collector – Base Blocking Voltage
Emitter – Base Blocking Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain *
Min
80
100
6
––
––
––
––
––
20
50
30
70
20
45
––
––
––
––
––
30
40
––
Max
––
––
––
50
1.0
1.0
500
1.0
1.0
––
––
90
200
––
––
0.9
1.5
1.8
2.2
1.8
––
––
275
100
100
2.0
200
Units
Volts
Volts
Volts
μA
μA
mA
μA
μA
mA
BV
CEO
BV
CBO
BV
EBO
I
CEO
I
CES
I
CEX
I
CEX
I
EBO
h
FE
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Base – Emitter Voltage*
Current Gain – Bandwidth Product
V
CE (SAT)
V
BE (SAT)
V
BE (ON)
f
T
C
ob
t
(on)
t
(off)
t
d
t
r
t
s
t
f
Volts
Volts
MHz
pF
ns
ns
μs
ns
2N5008
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening based on MIL-PRF-19500. Screening flows are available on
request.
3/ For Package Outlines Contact Factory.
V
CB
= 10 V, I
E
= 0 A, f = 1.0MHz
(V
CC
= 40 V, I
C
= 2 A
,
V
EB (OFF)
= 3.0 V, I
B1
= I
B2
= 200 mA)
(tp = 2μs)
––
––
––
––
4/ Up and Down Bend Configurations are Available for ‘M’ (TO-254)
Packages Only.
5/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
Available Part Numbers:
SPT5006/61, SPT5006/3, SPT5006M, SPT5006MUB, SPT5006MDB, SPT5006S1,
SPT5008/61, SPT5008/3, SPT5008M, SPT5008MUB, SPT5008MDB, SPT5008S1
PIN ASSIGNMENT (Standard)
Package
Collector Emitter
TO-61 (/61)
Pin 3
Pin 1
TO-3 (/3)
Case
Pin 2
TO-254 (M)
Pin 1
Pin 2
SMD1(S1)
Pin 2
Pin 1
Base
Pin 2
Pin 3
Pin 3
Pin 3
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0113A
DOC
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