BS62LV1029STIG55 datasheet, PDF

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BS62LV1029STIG55: DescriptionStandard SRAM, 128KX8, 55ns, CMOS, PDSO32; Categorystorage storage; File Size422KB，10 Pages; ManufacturerBrilliance; Environmental Compliance

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BS62LV1029STIG55 Overview

Standard SRAM, 128KX8, 55ns, CMOS, PDSO32

BS62LV1029STIG55 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Brilliance
package instruction	TSSOP, TSSOP32,.56,20
Reach Compliance Code	unknown
Maximum access time	55 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
length	11.8 mm
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP32,.56,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	3e-7 A
Minimum standby current	1.5 V
Maximum slew rate	0.047 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
width	8 mm

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BSI

FEATURES

Very Low Power/Voltage CMOS SRAM

128K X 8 bit

DESCRIPTION

BS62LV1029

• Vcc operation voltage : 4.5V ~ 5.5V

• Very low power consumption :

Vcc = 5.0V C-grade : 46mA (@55ns) operating current

I- grade : 47mA (@55ns) operating current

C-grade : 38mA (@70ns) operating current

I- grade : 39mA (@70ns) operating current

0.6uA (Typ.) CMOS standby current

• High speed access time :

-55

55ns

-70

70ns

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE2, CE1, and OE options

The BS62LV1029 is a high performance, very low power CMOS

Static Random Access Memory organized as 131,072 words by 8 bits

and operates from a range of 4.5V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current of

0.6uA at 5V/25

C and maximum access time of 55ns at 5V/85

Easy memory expansion is provided by an active LOW chip

enable (CE1), an active HIGH chip enable (CE2), and active LOW

output enable (OE) and three-state output drivers.

The BS62LV1029 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS62LV1029 is available in DICE form , JEDEC standard 32 pin

450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4

mm STSOP and 8mmx20mm TSOP.

PRODUCT FAMILY

PRODUCT

FAMILY

BS62LV1029SC

BS62LV1029TC

BS62LV1029STC

BS62LV1029PC

BS62LV1029JC

BS62LV1029DC

BS62LV1029SI

BS62LV1029TI

BS62LV1029STI

BS62LV1029PI

BS62LV1029JI

BS62LV1029DI

OPERATING

TEMPERATURE

Vcc

RANGE

SPEED

(ns)

55ns :4.5~5.5V

70ns :4.5~5.5V

POWER DISSIPATION

STANDBY

Operating

CCSB1

, Max)

55ns

PKG TYPE

SOP-32

TSOP-32

STSOP-32

PDIP-32

SOJ-32

DICE

SOP-32

TSOP-32

STSOP-32

PDIP-32

SOJ-32

DICE

Vcc=5.0V

Vcc= 5.0V

70ns

+0 C to +70 C

4.5V ~ 5.5V

55/70

8.0uA

46mA

38mA

-40 C to +85 C

4.5V~ 5.5V

55/70

20uA

47mA

39mA

PIN CONFIGURATIONS

A16

A14

A12

DQ0

DQ1

DQ2

GND

BS62LV1029SC

BS62LV1029SI

BS62LV1029PC

BS62LV1029PI

BS62LV1029JC

BS62LV1029JI

VCC

A15

CE2

A13

A11

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

BLOCK DIAGRAM

A12

A14

A16

A15

A13

A11

•

Address

Input

Buffer

Row

Decoder

1024

Memory Array

1024 x 1024

1024

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

Data

Input

Buffer

Column I/O

Write Driver

Sense Amp

128

Column Decoder

Control

Address Input Buffer

A11

A13

CE2

A15

VCC

A16

A14

A12

BS62LV1029TC

BS62LV1029STC

BS62LV1029TI

BS62LV1029STI

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

GND

DQ2

DQ1

DQ0

Data

Output

Buffer

Brilliance Semiconductor, Inc

reserves the right to modify document contents without notice.

R0201-BS62LV1029

•

CE2

CE1

Vdd

Gnd

A5 A4 A3 A2 A1 A0 A10

Revision 1.1

Jan.

2004

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