K9K1G08Q0A
K9K1G08U0A K9K1G16U0A
Preliminary
FLASH MEMORY
Document Title
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0
0.1
Initial issue.
1. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
2. 63FBGA,1.8V product is added.
K9K1G08Q0A-GCB0,GIB0,JCB0,JIB0
Errata is deleted.
AC parameters are changed.
Before
After
0.3
tWC tWH tWP tRC tREH tRP tREA tCEA
45 15 25 50 15 25 30
45
60 20 40 60 20 40 40
55
Oct. 14th 2003
Preliminary
Draft Date
Mar. 17th 2003
Jun. 4th 2003
Remark
Advance
Preliminary
Aug. 1st 2003
0.2
Preliminary
1. K9K1G16Q0A-DC(I)B0 is deleted.
2. AC parameters are changed.
K9K1GXXU0A
K9K1GXXD0A
K9K1G08Q0A
tWC tWH tWP tRC tREH tRP tREA tCEA
50 15 25 50 15 25 30
45
60
20
40
60
20
40
40
55
0.4
0.5
1. Add the Protrusion/Burr value in WSOP1 PKG Diagram.
1. PKG(TSOP1, WSOP1) Dimension Change
Apr. 23th 2004
May 21th 2004
Preliminary
Preliminary
Note : For more detailed features and specifications including FAQ, please refer to Samsung’ Flash web site.
s
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
1
K9K1G08Q0A
K9K1G08U0A K9K1G16U0A
Preliminary
FLASH MEMORY
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9K1G08Q0A-G,J
K9K1G08U0A-Y,P
K9K1G08U0A-G,J
K9K1G08U0A-V,F
K9K1G16U0A-Y,P
K9K1G16U0A-G,J
2.7 ~ 3.6V
X16
X8
Vcc Range
1.70 ~ 1.95V
Organization
X8
PKG Type
FBGA
TSOP1
FBGA
WSOP1
TSOP1
FBGA
FEATURES
•
Voltage Supply
- 1.8V device(K9K1G08Q0A) : 1.70~1.95V
- 3.3V device(K9K1GXXU0A) : 2.7 ~ 3.6 V
•
Organization
- Memory Cell Array
- X8 device(K9K1G08X0A) : (128M + 4096K)bit x 8 bit
- X16 device(K9K1G16X0A) : (64M + 2048K)bit x 16bit
- Data Register
- X8 device(K9K1G08X0A) : (512 + 16)bit x 8bit
- X16 device(K9K1G16X0A) : (256 + 8)bit x16bit
•
Automatic Program and Erase
- Page Program
- X8 device(K9K1G08X0A) : (512 + 16)Byte
- X16 device(K9K1G16X0A) : (256 + 8)Word
- Block Erase :
- X8 device(K9K1G08X0A) : (16K + 512)Byte
- X16 device(K9K1G16X0A) : ( 8K + 256)Word
•
Page Read Operation
- Page Size
- X8 device(K9K1G08X0A) : (512 + 16)Byte
- X16 device(K9K1G16X0A) : (256 + 8)Word
- Random Access
: 12µs(Max.)
- Serial Page Access : 50ns(Min.)*
* K9K1G08Q0A : 60ns(Min.)
•
Fast Write Cycle Time
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
•
Command/Address/Data Multiplexed I/O Port
•
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
•
Reliable CMOS Floating-Gate Technology
- Endurance
: 100K Program/Erase Cycles
- Data Retention : 10 Years
•
Command Register Operation
•
Intelligent Copy-Back
•
Unique ID for Copyright Protection
•
Package
- K9K1GXXU0A-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9K1GXXX0A-GCB0/GIB0
63- Ball FBGA
- K9K1G08U0A-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9K1GXXU0A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
- K9K1GXXX0A-JCB0/JIB0
63- Ball FBGA - Pb-free Package
- K9K1G08U0A-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9K1G08U0A-V,F(WSOPI ) is the same device as
K9K1G08U0A-Y,P(TSOP1) except package type.
GENERAL DESCRIPTION
The K9K1G08U0A is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides
the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typically 200µs on
the 528-byte(x8 device) or 264-word(x16 device) page and an erase operation can be performed in typically 2ms on a 16K-byte(x8
device) or 8K-word(x16 device) block. Data in the data register can be read out at 50ns(1.8V device : 60ns) cycle time per byte(X8
device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-
chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and mar-
gining of data. Even the write-intensive systems can take advantage of the K9K1G08U0A′s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K1G08U0A is an optimum solu-
tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
2
Embedded System
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