1.5V Drive Pch MOSFET
RT1A040ZP
Structure
Silicon P-channel MOSFET
Dimensions
(Unit : mm)
TSST8
(8)
(7)
(6)
(5)
Features
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
(1)
(2)
(3)
(4)
Abbreviated symbol : YE
Each lead has same dimensions
Applications
Switching
Packaging specifications
Package
Type
RT1A040ZP
Code
Basic ordering unit(piecies)
Taping
TR
3000
Equivalent circuit
(8)
(7)
(6)
(5)
∗2
∗1
(1) Drain
(2) Drain
(3) Drain
(4) Gate
(5) Source
(6) Drain
(7) Drain
(8) Drain
(1)
(2)
(3)
(4)
*1 ESD PROTECTION DIODE
*2 BODY DIODE
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temerature
∗1
Pw 10µs, Duty cycle 1%
∗2
When mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
P
D
Tch
Tstg
Limits
−12
±10
±4
±16
−1
−16
1.25
150
−55
to +150
Unit
V
V
A
A
A
A
W
°C
°C
∗2
Thermal resistance
Parameter
Channel to ambient
∗
When mounted on a ceramic board
Symbol
Rth(ch-a)
∗
Limits
100
Unit
°C
/ W
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2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.01 - Rev.A
RT1A040ZP
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
I
GSS
Gate-source leakage
Drain-source breakdown voltage V
(BR) DSS
Zero gete voltage drain current
I
DSS
Gate threshold voltage
V
GS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Data Sheet
R
DS (on)
∗
Y
fs
∗
C
iss
C
oss
C
rss
t
d (on)
∗
t
r
∗
t
d (off)
∗
t
f
∗
Q
g
∗
Q
gs
∗
Q
gd
∗
Min.
−
−12
−
−0.3
−
−
−
−
6.5
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
22
30
40
55
−
2350
310
280
11
70
380
210
30
4.0
3.5
Max.
±10
−
−1
−1.0
30
42
60
110
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=±10V, V
DS
=0V
I
D
=
−1mA,
V
GS
=0V
V
DS
=
−12V,
V
GS
=0V
V
DS
=
−6V,
I
D
=
−1mA
I
D
=
−4A,
V
GS
=
−4.5V
I
D
=
−2A,
V
GS
=
−2.5V
I
D
=
−2A,
V
GS
=
−1.8V
I
D
=
−0.8A,
V
GS
=
−1.5V
V
DS
=
−6V,
I
D
=
−4A
V
DS
=
−6V
V
GS
=0V
f=1MHz
V
DD
−6
V
I
D
=
−2A
V
GS
=
−4.5V
R
L
3Ω
R
G
=10Ω
V
DD
−6V
R
L
1.5Ω
R
G
=10Ω
I
D
=
−4A
V
GS
=
−4.5V
Body diode characteristics
(Source -drain) (Ta=25°C)
Parameter
Forward voltage
∗Pulsed
Symbol
V
SD
∗
Min.
−
Typ.
−
Max.
−1.2
Unit
V
Conditions
I
S
=
−4A,
V
GS
=0V
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2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.01 - Rev.A
RT1A040ZP
Electrical characteristic curves
10
-1.8V
-1.5V
10
Data Sheet
10
DRAIN CURRENT : -I
D
[A]
-4.5V
-2.2V
-1.7V
V
DS
=-6.0V
Pulsed
DRAIN CURRENT : -I
D
[A]
DRAIN CURRENT : -I
D
[A]
8
6
4
2
0
0.0
0.2
0.4
0.6
0.8
1.0
-10V
-4.5V
-2.5V
-1.3V
8
-1.3V
1
6
-1.2V
4
0.1
Ta=125
℃
Ta=75
℃
Ta=25
℃
Ta= -25
℃
V
GS
=-1.1V
2
V
GS
=-1.2V
Ta=25℃
Pulsed
Ta=25℃
Pulsed
0
2
4
6
8
10
0.01
0
0.001
0.0
0.5
1.0
1.5
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.1 Typical Output Characteristics(Ⅰ)
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.2 Typical Output Characteristics(Ⅱ)
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
Ta=25℃
Pulsed
V
GS
= -4.5V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
1000
1000
1000
V
GS
= -2.5V
Pulsed
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
V
GS
=
V
GS
=
V
GS
=
V
GS
=
0.1
1
-1.5V
-1.8V
-2.5V
-4.5V
10
10
10
1
1
0.1
1
DRAIN CURRENT : -I
D
[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
10
1
0.1
1
DRAIN CURRENT : -I
D
[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
10
DRAIN CURRENT : -I
D
[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
V
GS
= -1.8V
Pulsed
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V
GS
= -1.5V
Pulsed
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
FORWARD TRANSFER ADMITTANCE
: |Yfs|[S]
1000
1000
100
V
DS
= -6V
Pulsed
10
10
10
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
0.1
1
DRAIN CURRENT : -I
D
[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain
10
1
0.1
1
DRAIN CURRENT : -I
D
[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain
10
0
0.1
1.0
10.0
DRAIN CURRENT : -I
D
[A]
Fig.9 Forward Transfer Admittance
vs. Drain Current
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2009 ROHM Co., Ltd. All rights reserved.
3/5
2009.01 - Rev.A
RT1A040ZP
REVERSE DRAIN CURRENT : -Is [A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
10
Data Sheet
100
80
I
D
= -4.0A
60
I
D
= -2.0A
40
20
0
0
2
4
6
8
10
Ta=25°C
Pulsed
10000
Ta=25℃
V
DD
= -6.0V
V
GS
=-4.5V
RG=10Ω
Pulsed
SWITCHING TIME : t [ns]
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
100
td(off)
tf
0.1
V
GS
=0V
Pulsed
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
10
tr
td(on)
1
0.0
0.1
1.0
10.0
SOURCE-DRAIN VOLTAGE : -V
SD
[V]
Fig.10 Reverse Drain Current
vs. Sourse-Drain
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source
DRAIN-CURRENT : -I
D
[A]
Fig.12 Switching Characteristics
5
GATE-SOURCE VOLTAGE : -V
GS
[V]
4
3
2
1
0
0
5
10
15
20
25
30
Ta=25℃
V
DD
=-6V
I
D
=-4.0A
R
G
=10Ω
Pulsed
10000
Ciss
CAPACITANCE : C [pF]
Ta=25℃
f=1MHz
V
GS
=0V
1000
Crss
Coss
100
0.01
0.1
1
10
100
TOTAL GATE CHARGE : Qg [nC]
Fig.13 Dynamic Input Characteristics
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.14 Typical Capacitance
vs. Drain-Source
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2009 ROHM Co., Ltd. All rights reserved.
4/5
2009.01 - Rev.A
RT1A040ZP
Measurement circuits
Data Sheet
Pulse Width
I
D
V
GS
R
L
D.U.T.
R
G
V
DD
V
DS
V
GS
10%
50%
10%
90%
50%
10%
90%
V
DS
90%
t
d(on)
t
on
t
r
t
d(off)
t
off
tf
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
V
G
I
D
V
GS
R
L
I
G(Const.)
R
G
D.U.T.
V
DD
V
DS
V
GS
Q
gs
Q
g
Q
gd
Charge
Fig.2-1 Gate Charge Measurement Circuit
FIg.2-2 Gate Charge Waveform
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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2009 ROHM Co., Ltd. All rights reserved.
5/5
2009.01 - Rev.A
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