BFP180E6327 datasheet, PDF - EEWORLD Datasheet

BFP180E6327: DescriptionRF Small Signal Bipolar Transistor, 0.004A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN; CategoryDiscrete semiconductor The transistor; File Size159KB，7 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BFP180E6327 Overview

RF Small Signal Bipolar Transistor, 0.004A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

Parameter Name	Attribute value
Maker	SIEMENS
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.004 A
Collector-based maximum capacity	0.35 pF
Collector-emitter maximum voltage	8 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	7000 MHz

	BFP180E6327
Description	RF Small Signal Bipolar Transistor, 0.004A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Maker	SIEMENS
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.004 A
Collector-based maximum capacity	0.35 pF
Collector-emitter maximum voltage	8 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	7000 MHz

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