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BC338RLRE

Description
TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size348KB,34 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BC338RLRE Overview

TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN, BIP General Purpose Small Signal

BC338RLRE Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)225
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)210 MHz
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC337,-16,-25,-40
BC338,-16,-25,-40
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC337
45
50
5.0
800
625
5.0
1.5
12
– 55 to +150
BC338
25
30
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector – Emitter Breakdown Voltage
(IC = 100
µA,
IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10
m
A, IC = 0)
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 20 V, IE = 0)
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
(VCE = 25 V, VBE = 0)
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
BC337
BC338
ICES
BC337
BC338
IEBO
100
100
100
nAdc
V(BR)CEO
BC337
BC338
V(BR)CES
BC337
BC338
V(BR)EBO
ICBO
100
100
nAdc
50
30
5.0
Vdc
nAdc
45
25
Vdc
Vdc
2–94
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