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HSCH-5518

Description
Mixer Diode, Medium Barrier, K Band, Silicon
CategoryDiscrete semiconductor    diode   
File Size157KB,6 Pages
ManufacturerHewlett Packard Co.
Download Datasheet Parametric View All

HSCH-5518 Overview

Mixer Diode, Medium Barrier, K Band, Silicon

HSCH-5518 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHewlett Packard Co.
package instructionR-LTMW-F3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY VERSION AVAILABLE
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Maximum diode capacitance0.15 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.5 V
frequency bandK BAND
JESD-30 codeR-LTMW-F3
JESD-609 codee0
Number of components2
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeRECTANGULAR
Package formMICROWAVE
Pulse input maximum power0.15 W
Minimum pulse input power1 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationTRIPLE
Schottky barrier typeMEDIUM BARRIER

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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