Mixer Diode, Medium Barrier, K Band, Silicon
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Hewlett Packard Co. |
| package instruction | R-LTMW-F3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | HIGH RELIABILITY VERSION AVAILABLE |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
| Maximum diode capacitance | 0.15 pF |
| Diode component materials | SILICON |
| Diode type | MIXER DIODE |
| Maximum forward voltage (VF) | 0.5 V |
| frequency band | K BAND |
| JESD-30 code | R-LTMW-F3 |
| JESD-609 code | e0 |
| Number of components | 2 |
| Number of terminals | 3 |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -65 °C |
| Package body material | GLASS |
| Package shape | RECTANGULAR |
| Package form | MICROWAVE |
| Pulse input maximum power | 0.15 W |
| Minimum pulse input power | 1 W |
| Certification status | Not Qualified |
| surface mount | YES |
| technology | SCHOTTKY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | FLAT |
| Terminal location | TRIPLE |
| Schottky barrier type | MEDIUM BARRIER |