UPS5817e3 and UPS5819e3
POWERMITE 1™ SURFACE MOUNT
1 AMP 20 and 40 V SCHOTTKY RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
The UPS5817e3 and UPS5819e3 offer a small and powerful surface mount
package that is RoHS compliant for a 1 Amp rated Schottky. These ratings
are found only in much larger packages. They are ideal for surface mount
applications that operate at high frequencies with their “hot carrier” features
that provide extremely fast switching. The very low thermal resistance of the
patented Powermite 1™ package design with a full metallic bottom and
u
nique locking tab act as an efficient heat path to a heat sink mounting permitting
cooler operating junction temperatures for minimal reverse leakage currents
and lower power loss. It is also ideal for automatic insertion equipment.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-216
Powermite 1™
FEATURES
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Low profile DO-216 package (<1.1 mm)
RoHS compliant with e3 suffix part number
2
Small footprint area of 8.45 mm
Plastic package has Underwriters Laboratory
Flammability classification 94V-0
Unique locking tab on bottom acts as integral efficient
heat path to heat sink (mounting substrate)
Metal to silicon rectifier, majority carrier conduction
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, and JANTXV are available by
adding MQ, MX, or MV prefixes respectively to part
numbers. For example, designate a MXUPS5819e3
for a JANTX screen. Consult factory for Tin-Lead
plating
.
Optional avionics screening available by adding MA
prefix for 100% temperature cycling, thermal
impedance testing, and 24 hours HTRB. For example,
designate a MAUPS5819e3. Consult factory for Tin-
Lead plating
.
MAXIMUM RATINGS
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Storage temperature (T
STG
): -55
o
C to +150
o
C
o
o
Operating junction temperature (T
J
): -55 C to +150 C
o
Average forward rectified current (I
O
) @T
C
=100 C: 1.0
Amp
Forward surge current (I
FSM
) 8.3 ms single half-sine
waveform superimposed on rated load (JEDEC
Method): 50 Amps
Thermal resistance junction to case (bottom): 10
o
C/W
Thermal resistance (R
θJA
): 240
o
C/W on PCB with FR4
using 1 oz Copper and recommended mounting pad
size (see pad layout next page)
Solder temperatures: 260
º
C for 10 s (maximum)
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APPLICATIONS / BENEFITS
High current capability with low forward voltage
Guard-ring-die construction for transient protection
Silicon Schottky (hot carrier) rectifier for minimal t
rr
and minimal reverse recovery voltage
Elimination of reverse-recovery oscillations to
reduce need for EMI filtering
For use in high-frequency switching power supplies,
inverters, free wheeling, charge pump circuits and
polarity protection applications
Lower forward power loss and high efficiency
Low inductive parasitics (<2nH) for minimal Ldi/dt
effects
Robust package configuration for pick-and-place
handling
Full-metallic bottom eliminates flux entrapment
Small foot print with 0.100 x 0.160 inches (see
mounting pad details on last page)
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MECHANICAL AND PACKAGING
Terminals: Copper with annealed matte-Tin plating
for RoHS compliance solderable per MIL-STD-750
method 2026 (consult factory for Tin-Lead plating
.
)
Polarity: Backside is cathode
Marking: UPS5817e3 marked with S17•
and UPS5819e3 marked with S19•
Molded epoxy package meets UL94V-0
Weight: 0.016 grams (approximate)
Tape & Reel option: 12 mm tape per EIA-481-B
3000 units on 7 inch reel and 12,000 on 13” reel
(add TR7 or TR13 respectively to part number)
See package dimensions on last page
UPS5817e3 &
UPS5819e3
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Copyright
©
2007
6-26-2007 REV C
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
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