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GBU408

Description
Bridge Rectifier Diode, 4A, 800V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size108KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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GBU408 Overview

Bridge Rectifier Diode, 4A, 800V V(RRM),

GBU408 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current150 A
Number of components4
Maximum operating temperature150 °C
Maximum output current4 A
Maximum repetitive peak reverse voltage800 V
surface mountNO
BL
FEATURES
GALAXY ELECTRICAL
GBU4005 --- GBU410
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 4.0 A
SILICON BRIDGE RECT IFIERS
Ideal for printed circuit board
Reliable low cos t cons truction utilizing m olded
plas tic technique
Plas tic m aterrial has U/L flam m ability clas s ification
94V-O
Mounting pos ition: Any
GBU
.933(23.7)
.894(22.7)
.185(4.7)
.165(4.2)
.160(4.1)
.140(3.5)
45
.310(7.9)
.290(7.4)
0
.140(3.56)
.130(3.30)
+
+
.075(1.9)R.TYP.
.085(2.16)
.065(1.65)
.740(18.8)
.720(18.3)
_
.080(2.03)
.060(1.52)
~
~
+
Glass passivated chip junctions
.100(2.54)
.085(2.16)
.190(4.83)
.210(5.33)
.050(1.27)
.040(1.02)
.710(18)
.690(17.5)
.085(2.18)
.075(1.90)
.022(.56)
.018(.46)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
GBU
4005
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard Tc=100
output current
@T
A
=40
GBU
401
100
70
100
GBU
402
200
140
200
GBU
404
400
280
400
4.0
3.0
150.0
GBU
406
600
420
600
GBU
408
800
560
800
GBU
410
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
R MS
V
DC
I
F (AV)
50
35
50
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
Maximum instantaneous f orw ard voltage
at 2.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=125
(note 2)
(note 1)
Operating junction temperature range
Storage temperature range
I
F SM
A
V
F
I
R
C
J
R
θJA
R
θJC
T
J
T
STG
100
1.0
5.0
500.0
45
22.0
4.2
- 55 ---- + 150
- 55 ---- + 150
V
μ
A
mA
pF
/W
Typical junction capacitance per leg (note 3)
Typical thermal resistance per leg
N OTE: 1. Unit case m ounted on 1.6x1.6x0.06" thick (4.0x4.0x0.15cm ) AI. Plate.
2. U nits m ounted on P.C .B. with 0.5x0.5" (12x12m m) copper pads and 0.375" (9.5m m ) lead length.
3. Measured at 1.0 MH z and applied rev erse v oltage of 4.0 v olts.
www.galaxycn.com
Document Number 0287076
BL
GALAXY ELECTRICAL
1.

GBU408 Related Products

GBU408 GBU404 GBU406 GBU4005 GBU410
Description Bridge Rectifier Diode, 4A, 800V V(RRM), Bridge Rectifier Diode, 4A, 400V V(RRM), Bridge Rectifier Diode, 4A, 600V V(RRM), Bridge Rectifier Diode, 4A, 50V V(RRM), Bridge Rectifier Diode, 4A, 1000V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code unknown unknown unknown unknown unknow
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 1 V
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A 150 A
Number of components 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 4 A 4 A 4 A 4 A 4 A
Maximum repetitive peak reverse voltage 800 V 400 V 600 V 50 V 1000 V
surface mount NO NO NO NO NO
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