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IDT70T3509MS133BPGI

Description
Dual-Port SRAM, 1MX36, 15ns, CMOS, PBGA256, GREEN, BGA-256
Categorystorage    storage   
File Size256KB,23 Pages
ManufacturerIDT (Integrated Device Technology)
Environmental Compliance  
Download Datasheet Parametric View All

IDT70T3509MS133BPGI Overview

Dual-Port SRAM, 1MX36, 15ns, CMOS, PBGA256, GREEN, BGA-256

IDT70T3509MS133BPGI Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIDT (Integrated Device Technology)
Parts packaging codeBGA
package instructionLBGA, BGA256,16X16,40
Contacts256
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time15 ns
Other featuresFLOW-THROUGH OR PIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
JESD-30 codeS-PBGA-B256
JESD-609 codee1
length17 mm
memory density37748736 bit
Memory IC TypeDUAL-PORT SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of ports2
Number of terminals256
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA256,16X16,40
Package shapeSQUARE
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply2.5/3.3 V
Certification statusNot Qualified
Maximum seat height1.7 mm
Maximum standby current0.08 A
Minimum standby current2.4 V
Maximum slew rate1.37 mA
Maximum supply voltage (Vsup)2.6 V
Minimum supply voltage (Vsup)2.4 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width17 mm
HIGH-SPEED 2.5V
1024K x 36
IDT70T3509M
SYNCHRONOUS
DUAL-PORT STATIC RAM
WITH 3.3V OR 2.5V INTERFACE
Features:
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed data access
– Commercial: 4.2ns (133MHz)(max.)
– Industrial: 4.2ns (133MHz)(max.)
Selectable Pipelined or Flow-Through output mode
Counter enable and repeat features
Interrupt Flags
Full synchronous operation on both ports
– 7.5ns cycle time, 133MHz operation (9.5Gbps bandwidth)
– 1.5ns setup to clock and 0.5ns hold on all control, data, and
address inputs @ 133MHz
– Fast 4.2ns clock to data out
– Data input, address, byte enable and control registers
– Self-timed write allows fast cycle time
Separate byte controls for multiplexed bus and bus
matching compatibility
Dual Cycle Deselect (DCD) for Pipelined Output Mode
2.5V (±100mV) power supply for core
LVTTL compatible, selectable 3.3V (±150mV) or 2.5V
(±100mV) power supply for I/Os and control signals on
each port
Includes JTAG functionality
Available in a 256-pin Ball Grid Array (BGA)
Common BGA footprint provides design flexibility over
seven density generations (512K to 36M-bit)
Green parts available, see ordering information
BE
3R
Functional Block Diagram
BE
3L
BE
2L
BE
1L
BE
0L
BE
2R
BE
1R
BE
0R
FT/PIPE
L
1/0
0a 1a
a
0b 1b
b
0c 1c
c
0d 1d
d
1d 0d
d
1c 0c
c
1b 0b
b
1a 0a
a
1/0
FT/PIPE
R
R/W
L
R/W
R
(2)
(2)
CE
0L
CE
1L
1
0
1/0
B
W
0
L
B
W
1
L
B B B
WW W
2 3 3
L L R
B
W
2
R
B B
WW
1 0
R R
1
0
1/0
CE
0R
CE
1R
OE
L
OE
R
Dout0-8_L
Dout9-17_L
Dout18-26_L
Dout27-35_L
Dout0-8_R
Dout9-17_R
Dout18-26_R
Dout27-35_R
1d 0d 1c 0c 1b 0b 1a 0a
0a 1a 0b 1b 0c 1c 0d 1d
0/1
,
FT/PIPE
R
FT/PIPE
L
0/1
a b cd
dcba
1024K x 36
MEMORY
ARRAY
I/O
0L
- I/O
35L
Din_L
Din_R
I/O
0R
- I/O
35R
CLK
L
A
19L
A
0L
REPEAT
L
ADS
L
CNTEN
L
A
19R
CLK
R
,
Counter/
Address
Reg.
ADDR_L
ADDR_R
Counter/
Address
Reg.
A
0R
REPEAT
R
ADS
R
CNTEN
R
TDI
TCK
TMS
TRST
CE
0 L
CE1L
R/
W
L
INTERRUPT
LOGIC
R/
W
R
CE
0 R
CE1R
JTAG
TDO
INT
L
ZZ
L
(1)
INT
R
ZZ
CONTROL
LOGIC
ZZ
R
(1)
5682 drw 01
NOTE:
1. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. All static inputs, i.e., PL/FTx and OPTx
and the sleep mode pins themselves (ZZx) are not affected during sleep mode.
2. See Truth Table I for Functionality.
AUGUST 2007
DSC 5682/7
1
©2007 Integrated Device Technology, Inc.
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