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BU52012HFV

Description
MAGNETIC FIELD SENSOR-HALL EFFECT, -2.1--3mT, 0.2-1.6V, SQUARE, SURFACE MOUNT
CategoryThe sensor    Sensor/transducer   
File Size395KB,14 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

BU52012HFV Overview

MAGNETIC FIELD SENSOR-HALL EFFECT, -2.1--3mT, 0.2-1.6V, SQUARE, SURFACE MOUNT

BU52012HFV Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Reach Compliance Codecompli
Other featuresCMOS OUTPUT
body width1.2 mm
body height0.6 mm
Body length or diameter1.6 mm
lag0.9 mT
JESD-609 codee2
Maximum magnetic field range5 mT
Minimum magnetic field range0.6 mT
Installation featuresSURFACE MOUNT
Maximum working current0.009 mA
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Maximum output current0.5 mA
Output range0.20-1.60V
Output typeANALOG VOLTAGE
Package Shape/FormRECTANGULAR
Sensor/Transducer TypeMAGNETIC FIELD SENSOR,HALL EFFECT
Maximum supply voltage3.3 V
Minimum supply voltage1.65 V
surface mountYES
Terminal surfaceTin/Copper (Sn/Cu)
Termination typeSOLDER
Hall IC Series
Unipolar Detection
Hall ICs
BU52002GUL,BU52003GUL,BU52012HFV,BU52013HFV
No.10045EBT03
●Description
The unipolar Detection Hall IC detects only either the N pole or S pole. The output turns ON (active Low) upon detection.
It is most suitable for strictly unipole detection and when lower power consumption is desired.
●Features
1) unipolar detection
2) Micropower operation (small current using intermittent operation method)
3) Ultra-compact CSP4 package (BU52002GUL,BU52003GUL)
4) Small outline package (BU52012HFV,BU52013HFV)
5) Line up of supply voltage
For 1.8V Power supply voltage(BU52012HFV,BU52013HFV)
For 3.0V Power supply voltage (BU52002GUL,BU52003GUL)
6) High ESD resistance 8kV(HBM)
●Applications
Mobile phones, notebook computers, digital video camera, digital still camera, etc.
●Product
Lineup
Product name
BU52002GUL
BU52003GUL
BU52012HFV
BU52013HFV
Supply voltage Operate point
(V)
(mT)
2.40½3.30
3.7
2.40½3.30
-3.7
1.65½3.30
3.0
1.65½3.30
-3.0
Hysteresis
(mT)
0.8
0.8
0.9
0.9
Period
(ms)
50
50
50
50
Supply current
(AVG.)(μA)
6.5
6.5
3.5
3.5
Output type
CMOS
CMOS
CMOS
CMOS
Package
VCSP50L1
VCSP50L1
HVSOF5
HVSOF5
※Plus
is expressed on the S-pole; minus on the N-pole
●Absolute
Maximum Ratings
BU52002GUL,BU52003GUL (Ta=25℃)
Parameters
Power Supply Voltage
Output Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Symbol
V
DD
I
OUT
Pd
T
opr
T
stg
Limit
-0.1½+4.5
1
±1
2
420
-40½+85
-40½+125
Unit
V
mA
mW
※1.
Not to exceed Pd
※2.
Reduced by 4.20mW for each increase in Ta of 1℃ over 25℃(mounted on 50mm×58mm Glass-epoxy PCB)
BU52012HFV,BU52013HFV (Ta=25℃)
Parameters
Power Supply Voltage
Output Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Symbol
V
DD
I
OUT
Pd
T
opr
T
stg
Limit
-0.1½+4.5
3
±0.5
536
4
-40½+85
-40½+125
Unit
V
mA
mW
※3.
Not to exceed Pd
※4.
Reduced by 5.36mW for each increase in Ta of 1℃ over 25℃(mounted on 70mm×70mm×1.6mm Glass-epoxy PCB)
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
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