DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE350184C
K-BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
NF = 0.7 dB TYP., G
a
= 13.5 dB TYP. @ f = 20 GHz
• Micro-X ceramic (84C) package
APPLICATIONS
• 20 GHz-band DBS LNB
• Other K-band communication systems
ORDERING INFORMATION
Part Number
NE350184C-T1
NE350184C-T1A
Order Number
NE350184C-T1-A
NE350184C-T1A-A
Package
84C (Pb-Free)
Quantity
1 kpcs/reel
5 kpcs/reel
Marking
A
Supplying Form
• 12 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE350184C
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
G
P
tot
Note
Ratings
4
−3
I
DSS
80
165
+150
−65
to +150
Unit
V
V
mA
µ
A
mW
°C
°C
T
ch
T
stg
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10584EJ01V0DS (1st edition)
Date Published November 2005 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2003, 2005
NE350184C
RECOMMENDED OPERATING CONDITIONS (T
A
= +25°C)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
V
DS
I
D
P
in
MIN.
1
5
−
TYP.
2
10
−
MAX.
3
15
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Symbol
I
GSO
I
DSS
V
GS (off)
g
m
NF
G
a
V
GS
=
−3
V
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 2 V, I
D
= 100
µ
A
V
DS
= 2 V, I
D
= 10 mA
V
DS
= 2 V, I
D
= 10 mA, f = 20 GHz
Test Conditions
MIN.
−
15
−0.2
40
−
11
TYP.
−
−
−
−
0.7
13.5
MAX.
10
70
−2.0
−
1.0
−
Unit
µ
A
mA
V
mS
dB
dB
2
Data Sheet PG10584EJ01V0S
NE350184C
TYPICAL CHARACTERISTICS (T
A
= +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
100
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Total Power Dissipation P
tot
(mW)
150
Drain Current I
D
(mA)
200
80
60
V
GS
= 0 V
–0.2
V
20
–0.4
V
–0.6
V
100
40
50
0
50
100
150
200
250
0
1.0
Drain to Source Voltage V
DS
(V)
2.0
Ambient Temperature T
A
(˚C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
80
V
DS
= 2 V
Drain Current I
D
(mA)
60
40
20
0
–2.0
–1.0
Gate to Source Voltage V
GS
(V)
0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
2.0
25
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
2.0
20
f = 20 GHz
V
DS
= 2 V
G
a
18
16
14
12
10
8
NF
min
6
4
2
0
5
10
15
20
25
0
30
Minimum Noise Figure NF
min
(dB)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
5
10
15
20
NF
min
G
a
Minimum Noise Figure NF
min
(dB)
V
DS
= 2 V
I
D
= 10 mA
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Associated Gain G
a
(dB)
15
10
5
0
30
25
Frequency f (GHz)
Drain Current I
D
(mA)
Remark
The graphs indicate nominal characteristics.
Data Sheet PG10584EJ01V0S
3
Associated Gain G
a
(dB)
20
NE350184C
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→
[Device Parameters]
URL http://www.ncsd.necel.com/
4
Data Sheet PG10584EJ01V0S
NE350184C
RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm)
2.07
1.78
1.0
0.5
2.11 mm/R.P.
Z
O
= 50
Ω
Z
O
= 50
Ω
0.74
Reference Plane
(Calibration Plane)
1.78
2.11
2.11
13.0
Reference Plane
(Calibration Plane)
1.0
φ
0.3 TH
0.5
84C Ver. 2
6.0
RT/duroid 5880/ROGERS
t = 0.254 mm
εr
= 2.20
tan delta = 0.0009 @10 GHz
Data Sheet PG10584EJ01V0S
5
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