FSBB15CH60F Smart Power Module
April 28, 2006
FSBB15CH60F
Smart Power Module
Features
• UL Certified No.E209204 (SPM27-CA package)
• Very low thermal resistance due to using DBC
• 600V-15A 3-phase IGBT inverter bridge including control ICs
for gate driving and protection
• Divided negative dc-link terminals for inverter current sensing
applications
• Single-grounded power supply due to built-in HVIC
• Isolation rating of 2500Vrms/min.
SPM
General Description
TM
Applications
• AC 100V ~ 253V three-phase inverter drive for small power
ac motor drives
• Home appliances applications like air conditioner and
washing machine.
It is an advanced smart power module (SPM
TM
) that Fairchild
has newly developed and designed to provide very compact
and high performance ac motor drives mainly targeting low-
power inverter-driven application like air conditioner and wash-
ing machine. It combines optimized circuit protection and drive
matched to low-loss IGBTs. System reliability is further
enhanced by the integrated under-voltage lock-out and short-
circuit protection. The high speed built-in HVIC provides opto-
coupler-less single-supply IGBT gate driving capability that fur-
ther reduce the overall size of the inverter system design. Each
phase current of inverter can be monitored separately due to
the divided negative dc terminals.
Top View
44mm
Bottom View
26.8mm
Figure 1.
©2006 Fairchild Semiconductor Corporation
1
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FSBB15CH60F Rev. D
FSBB15CH60F Smart Power Module
Integrated Power Functions
• 600V-15A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figures 10 and 11.
• For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)
Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to a UV fault (Low-side supply)
• Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Top View
13.7
(1) V
CC(L)
(2) COM
(3) IN
(UL)
(4) IN
(VL)
(5) IN
(WL)
(6) V
FO
(7) C
FOD
(8) C
SC
(9) IN
(UH)
(10) V
CC(UH)
(11) V
B(U)
(12) V
S(U)
(13) IN
(VH)
(14) V
CC(VH)
(15) V
B(V)
(16) V
S(V)
(17) IN
(WH)
(18) V
CC(WH)
(19) V
B(W)
(20) V
S(W)
(21) N
U
(22) N
V
19.2
(23) N
W
(24) U
Case Temperature (T )
C
Detecting Point
(25) V
(26) W
DBC Substrate
(27) P
Figure 2.
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FSBB15CH60F Rev. D
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FSBB15CH60F Smart Power Module
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
Pin Name
V
CC(L)
COM
IN
(UL)
IN
(VL)
IN
(WL)
V
FO
C
FOD
C
SC
IN
(UH)
V
CC(UH)
V
B(U)
V
S(U)
IN
(VH)
V
CC(VH)
V
B(V)
V
S(V)
IN
(WH)
V
CC(WH)
V
B(W)
V
S(W)
N
U
N
V
N
W
U
V
W
P
Common Supply Ground
Signal Input for Low-side U Phase
Signal Input for Low-side V Phase
Signal Input for Low-side W Phase
Fault Output
Pin Description
Low-side Common Bias Voltage for IC and IGBTs Driving
Capacitor for Fault Output Duration Time Selection
Capacitor (Low-pass Filter) for Short-Current Detection Input
Signal Input for High-side U Phase
High-side Bias Voltage for U Phase IC
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
Signal Input for High-side V Phase
High-side Bias Voltage for V Phase IC
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High-side W Phase
High-side Bias Voltage for W Phase IC
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for W Phase IGBT Driving
Negative DC–Link Input for U Phase
Negative DC–Link Input for V Phase
Negative DC–Link Input for W Phase
Output for U Phase
Output for V Phase
Output for W Phase
Positive DC–Link Input
3
FSBB15CH60F Rev. D
www.fairchildsemi.com
FSBB15CH60F Smart Power Module
Internal Equivalent Circuit and Input/Output Pins
P (27)
(19) V
B(W )
(18) V
CC(W H)
VB
VCC
COM
IN
VS
W (26)
OUT
(17) IN
(W H)
(20) V
S(W )
(15) V
B(V)
(14) V
CC(VH)
VB
VCC
COM
IN
VS
V (25)
OUT
(13) IN
(VH)
(16) V
S(V)
(11) V
B(U)
(10) V
CC(UH)
VB
VCC
COM
IN
VS
U (24)
OUT
(9) IN
(UH)
(12) V
S(U)
(8) C
SC
(7) C
FO D
(6) V
FO
C(SC)
C(FOD)
VFO
OUT(W L)
N
W
(23)
(5) IN
(W L)
(4) IN
(VL)
(3) IN
(UL)
(2) COM
IN(W L) OUT(VL)
IN(VL)
IN(UL)
COM
OUT(UL)
V
SL
N
U
(21)
N
V
(22)
(1) V
CC(L)
VCC
Note:
1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT and one control IC. It has gate drive and protection functions.
2. Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals.
3. Inverter high-side is composed of three IGBTs, freewheeling diodes and three drive ICs for each IGBT.
Figure 3.
4
FSBB15CH60F Rev. D
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FSBB15CH60F Smart Power Module
Absolute Maximum Ratings
(T
J
= 25°C,
Inverter Part
Symbol
V
PN
V
PN(Surge)
V
CES
± I
C
± I
CP
P
C
T
J
Note:
Unless Otherwise Specified)
Parameter
Supply Voltage
Supply Voltage (Surge)
Collector-emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Collector Dissipation
Operating Junction Temperature
T
C
= 25°C
Conditions
Applied between P- N
U
, N
V
, N
W
Applied between P- N
U
, N
V
, N
W
Rating
450
500
600
15
30
50
-20 ~ 125
Units
V
V
V
A
A
W
°C
T
C
= 25°C, Under 1ms Pulse Width
T
C
= 25°C per One Chip
(Note 1)
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150
°C(@T
C
≤
100°C). However, to insure safe operation of the SPM, the average
junction temperature should be limited to T
J(ave)
≤
125°C (@T
C
≤
100°C)
Control Part
Symbol
V
CC
V
BS
V
IN
V
FO
I
FO
V
SC
Parameter
Control Supply Voltage
High-side Control Bias
Voltage
Input Signal Voltage
Fault Output Supply Voltage
Fault Output Current
Conditions
Applied between V
CC(UH)
, V
CC(VH)
, V
CC(WH)
, V
CC(L)
-
COM
Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
, V
B(W)
-
V
S(W)
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
, IN
(UL)
, IN
(VL)
,
IN
(WL)
- COM
Applied between V
FO
- COM
Sink Current at V
FO
Pin
Rating
20
20
-0.3~17
-0.3~V
CC
+0.3
5
-0.3~V
CC
+0.3
Units
V
V
V
V
mA
V
Current Sensing Input Voltage Applied between C
SC
- COM
Total System
Symbol
V
PN(PROT)
T
C
T
STG
V
ISO
Parameter
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
V
CC
= V
BS
= 13.5 ~ 16.5V
T
J
= 125°C, Non-repetitive, less than 2µs
-20°C
≤
T
J
≤
125°C, See Figure 2
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to DBC substrate
Rating
400
-20 ~ 100
-40 ~ 125
2500
Units
V
°C
°C
V
rms
Thermal Resistance
Symbol
R
th(j-c)Q
R
th(j-c)F
Note:
2. For the measurement point of case temperature(T
C
), please refer to Figure 2.
Parameter
Junction to Case Thermal
Resistance
Conditions
Inverter IGBT part (per 1/6 module)
Inverter FWD part (per 1/6 module)
Min.
-
-
Typ.
-
-
Max.
2.02
3.15
Units
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FSBB15CH60F
Device
FSBB15CH60F
Package
SPM27CA
Reel Size
-
Tape Width
-
Quantity
10
5
FSBB15CH60F Rev. D
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