-200mA / -30V Low V
CE
(sat) Digital transistors
(with built-in resistors)
DTB723YE / DTB723YM
Applications
Inverter, Interface, Driver
Feature
1) V
CE
(sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors
(see equivalent circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow positive biasing of the input.
They also have the advantage
of almost completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation,
making the device design easy.
Structure
PNP epitaxial plannar silicon transistor
(Resistor built-in type)
Packaging specifications
Package
Packaging type
Code
Part No.
DTB723YE
DTB723YM
−
Basic ordering
unit (pieces)
EMT3
Taping
TL
3000
VMT3
Taping
T2L
8000
−
VMT3
Each lead has same dimensions
Dimensions
(Unit : mm)
DTB723YE
1.6
0.3
(3)
0.7
0.55
0.8
(2)
(1)
1.6
0.2
0.5 0.5
1.0
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.2
0.15
0.1Min.
0.13
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : M52
DTB723YM
0.2
0.8
1.2
0.22
(1)(2)
1.2
0.32
(3)
0.4 0.4
0.8
0.5
(1) IN
(2) GND
(3) OUT
Abbreviated symbol : M52
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1
∗2
Inner circuit
Limits
Unit
R
1
OUT
Symbol
V
CC
V
IN
I
C (max)
P
D
Tj
Tstg
DTB723YE DTB723YM
−30
−15
to
+5
−200
150
150
−55
to
+150
V
V
IN
R
2
GND(+)
mA
mW
C
C
IN
GND(+)
OUT
∗1
Characteristics of built-in transistor.
∗2
Each terminal mounted on a recommended land.
R
1
=2.2kΩ / R
2
=10kΩ
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c
○
2009 ROHM Co., Ltd. All rights reserved.
0.2
1/2
2009.10 - Rev.C
DTB723YE / DTB723YM
Electrical characteristics
(Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
∗
Input resistance
Resistance ratio
∗
Characteristics of built-in transistor.
Data Sheet
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
f
T
R
1
R
2
/R
1
Min.
−
−2.5
−
−
−
140
−
1.54
3.6
Typ.
−
−
−70
−
−
−
260
2.2
4.5
Max.
−0.3
−
−300
−3.0
−500
−
−
2.86
5.5
Unit
V
mV
mA
nA
−
MHz
kΩ
−
Conditions
V
CC
=
−5V,
I
O
=
−100µA
V
O
=
−0.3V,
I
O
=
−20mA
I
O
/I
I
=
−50mA
/
−2.5mA
V
I
=
−5V
V
CC
=
−30V,
V
I
=0V
V
O
=
−2V,
I
O
=
−100mA
V
CE
=
−10V,
I
E
=5mA, f=100MHz
−
−
Electrical characteristic curves
200
180
OUTPUT CURRENT : IO (mA)
160
140
120
100
80
60
40
20
0
0
0.5
1
1.5
2
OUTPUT VOLTAGE : V
O
(V)
Fig.1 Output Current vs. Output Voltage
Ii=0.1mA
Ii=0mA
Ii=0.5mA
Ii=0.4mA
Ii=0.3mA
Ii=0.2mA
Ta=25℃
Ii=1.0mA
Ii=0.9mA
Ii=0.8mA
Ii=0.7mA
Ii=0.6mA
10
Ta=
－
40
℃
INPUT VOLTAGE : Vin (V)
V
0
=0.3V
(mA)
100
V
CC
=5V
10
25
℃
85
℃
125
℃
1
OUTPUT CURRENT : I
O
1
Ta=125
℃
85
℃
25
℃
－
40
℃
0.1
0.1
1
10
100
1000
OUTPUT CURRENT : I
O
(mA)
Fig.2 Input Voltage vs. Output Current
0.01
0
0.5
1
1.5
2
INPUT VOLTAGE : Vin(off) (V)
Fig.3 Output Current vs. Input Voltage
1000
OUTPUT VOLTAGE : V
O
(on) (V)
Ta=125
℃
85
℃
DC CURENT GAIN : G
I
25
℃
100
－
40
℃
V
O
=5V
1
Ta=125
℃
85
℃
25
℃
－
40
℃
0.1
I
O
/I
I
= 20/1
10
1
0.01
0.01
0.1
1
10
100
1000
1
10
100
1000
OUTPUT CURENT : I
O
(mA)
OUTPUT CURRENT : I
O
(mA)
Fig.5 Output Voltage vs. Output Current
Fig.4 DC Current Gain vs. Output Current
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c
○
2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.10 - Rev.C
Notice
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
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