EEWORLDEEWORLDEEWORLD

Part Number

Search

DTC114TUA

Description
100mA / 50V Digital transistors (with built-in resistors)
CategoryDiscrete semiconductor    The transistor   
File Size75KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

DTC114TUA Overview

100mA / 50V Digital transistors (with built-in resistors)

DTC114TUA Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresDIGITAL, BUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
100mA / 50V Digital transistors
(with built-in resistors)
DTC114TM / DTC114TE / DTC114TUA / DTC114TKA
z
Applications
Inverter, Interface, Driver
z
Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
z
Structure
NPN epitaxial planar silicon transistor (Resistor built-in type)
z
Dimensions
(Unit : mm)
DTC114TM
0.2
DTC114TE
1.2
0.32
(3)
1.6
0.3
( 3)
0.7
0.55
0.8
( 2)
(1)
0.4 0.4
0.13
0.5
0.2
0.2
0.5 0.5
ROHM : VMT3
0.8
(1) Base
(2) Emitter
(3) Collector
0.15
0.1Min.
0.2
0.22
(1)(2)
0.8
1.2
1.6
ROHM : EMT3
1.0
Abbreviated symbol : 04
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : 04
DTC114TUA
2.0
0.3
(3)
0.9
0.2
0.7
DTC114TKA
2.9
0.4
(3)
1.1
0.8
1.25
2.1
(2)
(1)
0.3Min.
0.65 0.65
0.1Min.
(2)
(1)
ROHM : UMT3
EIAJ : SC-70
1.3
0.15
(1) Emitter
(2) Base
(3) Collector
1.6
2.8
0.95 0.95
0.15
Each lead has same dimensions
Abbreviated symbol : 04
ROHM : SMT3
EIAJ : SC-59
1.9
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Abbreviated symbol : 04
z
Inner circuit
C
B
R
1
E
B : Base
C : Collector
E : Emitter
R
1
=10kΩ
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.06 - Rev.C

DTC114TUA Related Products

DTC114TUA DTC114TE DTC114TE_09 DTC114TM DTC114TKA
Description 100mA / 50V Digital transistors (with built-in resistors) 100mA / 50V Digital transistors (with built-in resistors) 100mA / 50V Digital transistors (with built-in resistors) 100mA / 50V Digital transistors (with built-in resistors) 100mA / 50V Digital transistors (with built-in resistors)
Is it lead-free? Lead free Lead free - Lead free Lead free
Is it Rohs certified? conform to conform to - conform to conform to
Maker ROHM Semiconductor ROHM Semiconductor - ROHM Semiconductor ROHM Semiconductor
Parts packaging code SC-70 SC-75A - SC-105 SC-59
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 - 3 3
Reach Compliance Code compli compli - compli compli
ECCN code EAR99 EAR99 - EAR99 EAR99
Other features DIGITAL, BUILT IN BIAS RESISTOR DIGITAL, BUILT IN BIAS RESISTOR - - DIGITAL, BUILT IN BIAS RESISTOR
Maximum collector current (IC) 0.1 A 0.1 A - 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V - 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 100 100 - 100 100
JESD-30 code R-PDSO-G3 R-PDSO-G3 - R-PDSO-F3 R-PDSO-G3
JESD-609 code e1 e1 - e2 e1
Humidity sensitivity level 1 1 - - 1
Number of components 1 1 - 1 1
Number of terminals 3 3 - 3 3
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 - 260 260
Polarity/channel type NPN NPN - NPN NPN
Maximum power dissipation(Abs) 0.2 W 0.15 W - - 0.2 W
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified
surface mount YES YES - YES YES
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) - Tin/Copper (Sn/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form GULL WING GULL WING - FLAT GULL WING
Terminal location DUAL DUAL - DUAL DUAL
Maximum time at peak reflow temperature 10 10 - 10 10
transistor applications SWITCHING SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON SILICON - SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz - 250 MHz 250 MHz

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 652  69  1499  1124  1780  14  2  31  23  36 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号