DTC114TE datasheet, PDF - EEWORLD Datasheet

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DTC114TE: Description100mA / 50V Digital transistors (with built-in resistors); CategoryDiscrete semiconductor The transistor; File Size75KB，3 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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DTC114TE Overview

100mA / 50V Digital transistors (with built-in resistors)

DTC114TE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
Parts packaging code	SC-75A
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Is Samacsys	N
Other features	DIGITAL, BUILT IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
JESD-609 code	e1
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Base Number Matches	1

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100mA / 50V Digital transistors

(with built-in resistors)

DTC114TM / DTC114TE / DTC114TUA / DTC114TKA

Applications

Inverter, Interface, Driver

Features

1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see

equivalent circuit).

2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also

have the advantage of almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for operation, making the device design easy.

Structure

NPN epitaxial planar silicon transistor (Resistor built-in type)

Dimensions

(Unit : mm)

DTC114TM

0.2

DTC114TE

1.2

0.32

(3)

1.6

0.3

( 3)

0.7

0.55

0.8

( 2)

(1)

0.4 0.4

0.13

0.5

0.2

0.5 0.5

ROHM : VMT3

0.8

(1) Base

(2) Emitter

(3) Collector

0.15

0.1Min.

0.2

0.22

(1)(2)

0.8

1.2

1.6

ROHM : EMT3

1.0

Abbreviated symbol : 04

(1) Emitter

(2) Base

(3) Collector

Abbreviated symbol : 04

DTC114TUA

2.0

0.3

(3)

0.9

0.2

0.7

DTC114TKA

2.9

0.4

(3)

1.1

0.8

1.25

2.1

(2)

(1)

0.3Min.

0.65 0.65

0.1Min.

(2)

(1)

ROHM : UMT3

EIAJ : SC-70

1.3

0.15

(1) Emitter

(2) Base

(3) Collector

1.6

2.8

0.95 0.95

0.15

Each lead has same dimensions

Abbreviated symbol : 04

ROHM : SMT3

EIAJ : SC-59

1.9

(1) Emitter

(2) Base

(3) Collector

Each lead has same dimensions

Abbreviated symbol : 04

Inner circuit

B : Base

C : Collector

E : Emitter

=10kΩ

www.rohm.com

1/2

2009.06 - Rev.C

Notice

Notes

No copying or reproduction of this document, in part or in whole, is permitted without the

consent of ROHM Co.,Ltd.

The content specified herein is subject to change for improvement without notice.

The content specified herein is for the purpose of introducing ROHM's products (hereinafter

"Products"). If you wish to use any such Product, please be sure to refer to the specifications,

which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specified in this document.

However, should you incur any damage arising from any inaccuracy or misprint of such

information, ROHM shall bear no responsibility for such damage.

The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or

implicitly, any license to use or exercise intellectual property or other rights held by ROHM and

other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the

use of such technical information.

The Products specified in this document are intended to be used with general-use electronic

equipment or devices (such as audio visual equipment, office-automation equipment, commu-

nication devices, electronic appliances and amusement devices).

The Products specified in this document are not designed to be radiation tolerant.

While ROHM always makes efforts to enhance the quality and reliability of its Products, a

Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard

against the possibility of physical injury, fire or any other damage caused in the event of the

failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM

shall bear no responsibility whatsoever for your use of any Product outside of the prescribed

scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or

system which requires an extremely high level of reliability the failure or malfunction of which

may result in a direct threat to human life or create a risk of human injury (such as a medical

instrument, transportation equipment, aerospace machinery, nuclear-reactor controller,

fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of

any of the Products for the above special purposes. If a Product is intended to be used for any

such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology specified herein that may

be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to

obtain a license or permit under the Law.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

www.rohm.com

R0039A

DTC114TE Related Products

	DTC114TE	DTC114TE_09	DTC114TM	DTC114TUA	DTC114TKA
Description	100mA / 50V Digital transistors (with built-in resistors)	100mA / 50V Digital transistors (with built-in resistors)	100mA / 50V Digital transistors (with built-in resistors)	100mA / 50V Digital transistors (with built-in resistors)	100mA / 50V Digital transistors (with built-in resistors)
Is it lead-free?	Lead free	-	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	-	conform to	conform to	conform to
Maker	ROHM Semiconductor	-	ROHM Semiconductor	ROHM Semiconductor	ROHM Semiconductor
Parts packaging code	SC-75A	-	SC-105	SC-70	SC-59
package instruction	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	-	3	3	3
Reach Compliance Code	compli	-	compli	compli	compli
ECCN code	EAR99	-	EAR99	EAR99	EAR99
Other features	DIGITAL, BUILT IN BIAS RESISTOR	-	-	DIGITAL, BUILT IN BIAS RESISTOR	DIGITAL, BUILT IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A	-	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	-	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100	-	100	100	100
JESD-30 code	R-PDSO-G3	-	R-PDSO-F3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e1	-	e2	e1	e1
Humidity sensitivity level	1	-	-	1	1
Number of components	1	-	1	1	1
Number of terminals	3	-	3	3	3
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	-	260	260	260
Polarity/channel type	NPN	-	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.15 W	-	-	0.2 W	0.2 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	-	YES	YES	YES
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	-	Tin/Copper (Sn/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	GULL WING	-	FLAT	GULL WING	GULL WING
Terminal location	DUAL	-	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	10	-	10	10	10
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	-	250 MHz	250 MHz	250 MHz

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