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DTD523YE_09

Description
500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
File Size173KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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DTD523YE_09 Overview

500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)

500mA / 12V Low V
CE
(sat) Digital transistors
(with built-in resistors)
DTD523YE / DTD523YM
Applications
Inverter, Interface, Driver
Feature
1) V
CE
(sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation,
making the device design easy.
Dimensions
(Unit : mm)
DTD523YE
1.6
0.3
(3)
0.8
1.6
0.7
0.55
0.2
0.5 0.5
1.0
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.2
0.15
0.1Min.
(2)
(1)
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : X62
DTD523YM
0.2
0.8
1.2
1.2
0.32
(3)
Structure
NPN epitaxial plannar silicon transistor
(Resistor built-in type)
VMT3
0.2
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
(1) IN
(2) GND
(3) OUT
Each lead has same dimensions
Packaging specifications
Package
Packaging type
Code
Part No.
DTD523YE
DTD523YM
Basic ordering
unit (pieces)
EMT3
Taping
TL
3000
VMT3
Taping
T2L
8000
Abbreviated symbol : X62
Absolute maximum ratings
(Ta=25°C
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1
∗2
Inner circuit
Limits
Unit
V
V
mA
mW
C
C
IN
GND
OUT
R
1
IN
R
2
GND
OUT
Symbol
V
CC
V
IN
I
C (max)
P
D
Tj
Tstg
DTD523YE DTD523YM
12
−5
to
+12
500
150
150
−55
to
+150
∗1
Characteristics of built-in transistor.
∗2
Each terminal mounted on a recommended land.
R
1
=2.2kΩ / R
2
=10kΩ
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.05 - Rev.B

DTD523YE_09 Related Products

DTD523YE_09 DTD523YM DTD523YE
Description 500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors) 500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors) 500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
Is it lead-free? - Lead free Lead free
Is it Rohs certified? - conform to conform to
Maker - ROHM Semiconductor ROHM Semiconductor
Parts packaging code - SC-105 SC-75A
package instruction - SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-G3
Contacts - 3 3
Reach Compliance Code - compli compli
ECCN code - EAR99 EAR99
Other features - BUILT IN BIAS RESISTOR RATIO 4.5 BUILT IN BIAS RESISTOR RATIO 4.5
Maximum collector current (IC) - 0.5 A 0.5 A
Collector-emitter maximum voltage - 12 V 12 V
Configuration - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) - 140 140
JESD-30 code - R-PDSO-F3 R-PDSO-G3
JESD-609 code - e2 e1
Number of components - 1 1
Number of terminals - 3 3
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260
Polarity/channel type - NPN NPN
Certification status - Not Qualified Not Qualified
surface mount - YES YES
Terminal surface - Tin/Copper (Sn/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form - FLAT GULL WING
Terminal location - DUAL DUAL
Maximum time at peak reflow temperature - 10 10
transistor applications - AMPLIFIER AMPLIFIER
Transistor component materials - SILICON SILICON
Nominal transition frequency (fT) - 260 MHz 260 MHz
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