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DTD523YM

Description
500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
CategoryDiscrete semiconductor    The transistor   
File Size173KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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DTD523YM Overview

500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)

DTD523YM Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSC-105
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO 4.5
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)140
JESD-30 codeR-PDSO-F3
JESD-609 codee2
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)260 MHz
500mA / 12V Low V
CE
(sat) Digital transistors
(with built-in resistors)
DTD523YE / DTD523YM
Applications
Inverter, Interface, Driver
Feature
1) V
CE
(sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation,
making the device design easy.
Dimensions
(Unit : mm)
DTD523YE
1.6
0.3
(3)
0.8
1.6
0.7
0.55
0.2
0.5 0.5
1.0
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.2
0.15
0.1Min.
(2)
(1)
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : X62
DTD523YM
0.2
0.8
1.2
1.2
0.32
(3)
Structure
NPN epitaxial plannar silicon transistor
(Resistor built-in type)
VMT3
0.2
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
(1) IN
(2) GND
(3) OUT
Each lead has same dimensions
Packaging specifications
Package
Packaging type
Code
Part No.
DTD523YE
DTD523YM
Basic ordering
unit (pieces)
EMT3
Taping
TL
3000
VMT3
Taping
T2L
8000
Abbreviated symbol : X62
Absolute maximum ratings
(Ta=25°C
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1
∗2
Inner circuit
Limits
Unit
V
V
mA
mW
C
C
IN
GND
OUT
R
1
IN
R
2
GND
OUT
Symbol
V
CC
V
IN
I
C (max)
P
D
Tj
Tstg
DTD523YE DTD523YM
12
−5
to
+12
500
150
150
−55
to
+150
∗1
Characteristics of built-in transistor.
∗2
Each terminal mounted on a recommended land.
R
1
=2.2kΩ / R
2
=10kΩ
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.05 - Rev.B

DTD523YM Related Products

DTD523YM DTD523YE_09 DTD523YE
Description 500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors) 500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors) 500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
Is it lead-free? Lead free - Lead free
Is it Rohs certified? conform to - conform to
Maker ROHM Semiconductor - ROHM Semiconductor
Parts packaging code SC-105 - SC-75A
package instruction SMALL OUTLINE, R-PDSO-F3 - SMALL OUTLINE, R-PDSO-G3
Contacts 3 - 3
Reach Compliance Code compli - compli
ECCN code EAR99 - EAR99
Other features BUILT IN BIAS RESISTOR RATIO 4.5 - BUILT IN BIAS RESISTOR RATIO 4.5
Maximum collector current (IC) 0.5 A - 0.5 A
Collector-emitter maximum voltage 12 V - 12 V
Configuration SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 140 - 140
JESD-30 code R-PDSO-F3 - R-PDSO-G3
JESD-609 code e2 - e1
Number of components 1 - 1
Number of terminals 3 - 3
Maximum operating temperature 150 °C - 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - 260
Polarity/channel type NPN - NPN
Certification status Not Qualified - Not Qualified
surface mount YES - YES
Terminal surface Tin/Copper (Sn/Cu) - Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form FLAT - GULL WING
Terminal location DUAL - DUAL
Maximum time at peak reflow temperature 10 - 10
transistor applications AMPLIFIER - AMPLIFIER
Transistor component materials SILICON - SILICON
Nominal transition frequency (fT) 260 MHz - 260 MHz
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