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EMN11

Description
0.1 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size132KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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EMN11 Overview

0.1 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE

EMN11 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSC-75A
package instructionULTRA SMALL, EMD6, SC-75A, 6 PIN
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
Configuration2 BANKS, COMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-F6
JESD-609 codee2
Number of components4
Number of terminals6
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.15 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
Maximum reverse current0.1 µA
Maximum reverse recovery time0.004 µs
Reverse test voltage70 V
surface mountYES
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
EMN11
Diodes
Switching diode
EMN11
Application
Ultra high speed switching
Dimensions
(Unit : mm)
Land size figure
(Unit : mm)
1.0
0.5 0.5
1.6±0.1
0.22±0.05
0.13±0.05
(5)
(4)
1.2±0.1
1.6±0.1
0.45
Features
1) Ultra small mold type. (EMD6)
2) High reliability
(6)
0.25 0.15
0.3
0.15 0.25
0½0.1
0.4
EMD6
Construction
Silicon epitaxial planar
(1)
0.5
(2)
0.5
(3)
Structure
0.5±0.05
1.0±0.1
ROHM : EMD6
JEITA : SC-75A Size
dot (year week factory)
Taping specifications
(Unit : mm)
1.75±0.1
4.0±0.1 2.0±0.05
φ1.5
−0
+0.1
0.3±0.1
1.65±0.1
5.5±0.2
0~0.1
3.5±0.05
8.0±0.2
1.7±0.05
1PIN 4.0±0.1
φ0.8±0.1
0.65±0.1
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current (Single)
Average rectified forward current
Surge current
(t=1us)
(Single)
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
Io
I
surge
Pd
Tj
Tstg
Limits
80
80
300
100
4
150
150
-55 to +150
Unit
V
V
mA
mA
A
mW/Total *
*Pd = 120mW when only 1 circuit is operating. CONDITION = Each terminal mounted on a recommended land pattern.(0.35×0.9mm)
Electrical characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V
F
I
R
Ct
trr
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.2
0.1
3.5
4
Unit
V
µA
pF
ns
Conditions
I
F
=100mA
V
R
=70V
V
R
=6V , f=1MHz
V
R
=6V , IF=5mA , RL=50Ω
Rev.B
1.65±0.01
1.55
1/2

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Description 0.1 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE
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