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HZK2B

Description
Zener Diode, 2.1V V(Z), 9.52%, 0.5W, Silicon, Unidirectional, LLD, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size33KB,8 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

HZK2B Overview

Zener Diode, 2.1V V(Z), 9.52%, 0.5W, Silicon, Unidirectional, LLD, 2 PIN

HZK2B Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW LEAKAGE, LOW ZENER IMPEDANCE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance100 Ω
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage2.1 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum voltage tolerance9.52%
Working test current5 mA
HZK Series
Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply
ADE-208-126B (Z)
Rev. 2
Features
Low leakage, low zener impedance and maximum power dissipation of 500mW.
Wide spectrum from 1.9V through 38V of zener voltage provide flexible application.
LLD Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HZK Series
Mark
Color Code
Package Code
LLD
Outline
Cathode band
1
3rd. band
2nd. band
Cathode band
1
3rd. band
2nd. band
2
2
1. Cathode
2. Anode
Absolute Maximum Ratings
(Ta = 25°C)
Item
Power dissipation
Junction temperature
Storage temperature
Note: With P.C. Board.
Symbol
Pd*
Tj
Tstg
Value
500
175
–55 to +175
Unit
mW
°C
°C
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