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JANS2N3810

Description
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78, SIMILAR TO TO-78, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size111KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANS2N3810 Overview

Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78, SIMILAR TO TO-78, 6 PIN

JANS2N3810 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1813648805
Parts packaging codeTO-78
package instructionSIMILAR TO TO-78, 6 PIN
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage60 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)125
JEDEC-95 codeTO-78
JESD-30 codeO-MBCY-W6
JESD-609 codee0
Number of components2
Number of terminals6
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Certification statusNot Qualified
GuidelineMIL-19500
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /336
DEVICES
LEVELS
2N3810
2N3810L
2N3810U
2N3811
2N3811L
2N3811U
JAN
JANTX
JANTV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CEO
V
CBO
V
EBO
I
C
One
Section
1
Total Power Dissipation
@ T
A
= +25°C
P
T
T
J
, T
stg
200
Value
60
60
5.0
50
Both
Sections
2
350
mW
°C
Unit
Vdc
Vdc
Vdc
mAdc
Operating & Storage Junction Temperature
Range
Note:
1.
2.
-65 to +200
TO-78
Derate linearly 1.143mW/°C for T
A
> +25°C (one section)
Derate linearly 2.00mW/°C for T
A
> +25°C (both sections)
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 100μAdc
Collector-Base Cutoff Current
V
CB
= 50Vdc
V
CB
= 60Vdc
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc
V
EB
= 5.0Vdc
V
(BR)CEO
60
Vdc
Symbol
Min.
Max.
Unit
I
CBO
10
10
10
10
ηAdc
μAdc
ηAdc
μAdc
I
EBO
T4-LDS-0118 Rev. 1 (091095)
Page 1 of 3

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