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UMT3906

Description
PNP General Purpose Transistor
CategoryDiscrete semiconductor    The transistor   
File Size116KB,5 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

UMT3906 Overview

PNP General Purpose Transistor

UMT3906 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Maximum off time (toff)300 ns
UMT3906/SST3906/MMST3906
Transistors
PNP General Purpose Transistor
UMT3906 / SST3906 / MMST3906
Features
1) BV
CEO
>
−40V
(I
C
=
−1mA)
2) Complements the T3904/SST3904/MMST3909.
3) Low capacitance.
Dimensions
(Unit : mm)
UMT3906
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
Package, marking, and packaging specifications
Type
Packaging type
Marking
Code
Basic ordering unit (pieces)
UMT3906
UMT3
R2A
T106
3000
SST3906 MMST3906
SST3
R2A
T116
3000
SMT3
R2A
T146
3000
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
SST3906
MMST3906
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power
dissipation
UMT3906
SST3906,MMST3906
SST3906,MMST3906
Junction temperature
Storage temperature
Tj
Tstg
Symbol
V
CBO
V
CEO
V
EBO
I
O
Pd
Limits
−40
−40
−5
−0.2
6.2
0.35
150
−55
to
+150
Unit
V
V
V
A
W
W
°C
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
°C
When mounted on a 7
5 0.6mm ceramic board.
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
Min.
−40
−40
−5
−0.65
60
80
DC current transfer ratio
h
FE
100
60
30
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage tiem
Fall time
f
T
Cob
Cib
td
tr
tstg
tf
250
Typ.
Max.
−50
−50
−0.25
−0.4
−0.85
−0.95
300
4.5
10
35
35
225
75
MHz
pF
pF
ns
ns
ns
ns
Unit
V
V
V
nA
nA
V
V
I
C
=
−10µA
I
C
=
−1mA
I
E
=
−10µA
V
CB
=
−30V
V
EB
=
−3V
I
C
/I
B
=
−10mA/ −1mA
I
C
/I
B
=
−50mA/ −5mA
I
C
/I
B
=
−10mA/ −1mA
I
C
/I
B
=
−50mA/ −5mA
V
CE
=
−1V,
I
C
=
−0.1mA
V
CE
=
−1V,
I
C
=
−1mA
V
CE
=
−1V,
I
C
=
−10mA
V
CE
=
−1V,
I
C
=
−50mA
V
CE
=
−1V,
I
C
=
−100mA
V
CE
=
−20V,
I
E
=10mA, f=100MHz
V
CB
=
−10V,
f=100kHz, I
E
=0A
V
CB
=
−0.5V,
f=100kHz, I
C
=0A
V
CC
=
−3V,
V
BE(OFF)
=
−0.5V,I
C
=
−10mA,
I
B1
=
−1mA
V
CC
=
−3V,
V
BE(OFF)
=
−0.5V,I
C
=
−10mA,
I
B1
=
−1mA
V
CC
=
−3V,
I
C
=
−10mA,
I
B1
=
−I
B2
=
−1mA
V
CC
=
−3V,
I
C
=
−10mA,
I
B1
=
−I
B2
=
−1mA
Conditions
+
+
Rev.B
1/4

UMT3906 Related Products

UMT3906 UMT3906_1 MMST3906 SST3906
Description PNP General Purpose Transistor PNP General Purpose Transistor PNP General Purpose Transistor PNP General Purpose Transistor
Is it lead-free? Lead free - Lead free Lead free
Is it Rohs certified? conform to - conform to conform to
Maker ROHM Semiconductor - ROHM Semiconductor ROHM Semiconductor
package instruction SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compli - compliant compliant
ECCN code EAR99 - EAR99 EAR99
Maximum collector current (IC) 0.2 A - 0.2 A 0.2 A
Collector-emitter maximum voltage 40 V - 40 V 40 V
Configuration SINGLE - SINGLE SINGLE
Minimum DC current gain (hFE) 30 - 30 30
JESD-30 code R-PDSO-G3 - R-PDSO-G3 R-PDSO-G3
JESD-609 code e1 - e1 e1
Number of components 1 - 1 1
Number of terminals 3 - 3 3
Maximum operating temperature 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - 260 260
Polarity/channel type PNP - PNP PNP
Maximum power dissipation(Abs) 0.2 W - 0.2 W 0.2 W
Certification status Not Qualified - Not Qualified Not Qualified
surface mount YES - YES YES
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) - TIN SILVER COPPER Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal form GULL WING - GULL WING GULL WING
Terminal location DUAL - DUAL DUAL
Maximum time at peak reflow temperature 10 - 10 10
transistor applications SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON
Nominal transition frequency (fT) 250 MHz - 250 MHz 250 MHz
Maximum off time (toff) 300 ns - 300 ns 300 ns
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