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IRKNF112-08HN

Description
Silicon Controlled Rectifier, 250A I(T)RMS, 112000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, POWER, INT-A-PAK-5
CategoryAnalog mixed-signal IC    Trigger device   
File Size195KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRKNF112-08HN Overview

Silicon Controlled Rectifier, 250A I(T)RMS, 112000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, POWER, INT-A-PAK-5

IRKNF112-08HN Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-PUFM-D3
Contacts5
Reach Compliance Codeunknown
Other featuresUL APPROVED
Shell connectionISOLATED
Nominal circuit commutation break time10 µs
ConfigurationSINGLE WITH BUILT-IN FREE-WHEELING DIODE
Critical rise rate of minimum off-state voltage400 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Quick connection descriptionG-GR
Description of screw terminals2K-CA
Maximum holding current600 mA
JESD-30 codeR-PUFM-D3
Maximum leakage current30 mA
Humidity sensitivity level1
On-state non-repetitive peak current3200 A
Number of components1
Number of terminals3
Maximum on-state current112000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum rms on-state current250 A
Maximum repetitive peak off-state leakage current30000 µA
Off-state repetitive peak voltage800 V
Repeated peak reverse voltage800 V
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
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