MTM4N90 datasheet, PDF - EEWORLD Datasheet

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MTM4N90: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size24KB，2 Pages; ManufacturerSemiconductor Technology Inc

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MTM4N90 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

MTM4N90 Parametric

Parameter Name	Attribute value
Maker	Semiconductor Technology Inc
package instruction	,
Reach Compliance Code	compliant
Configuration	Single
Maximum drain current (Abs) (ID)	4 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	125 W
surface mount	NO

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PRODUCT SPECIFICATIONS

SEMICONDUCTOR TECHNOLOGY, INC.

3131 S. E. JAY STREET, STUART, FL 34997

PH: (561) 283-4500 FAX: (561) 286-8914

Website: http://www.semi-tech-inc.com

CASE OUTLINE:

TO-204AA (TO-3)

TYPE:

MTM4N90

HIGH VOLTAGE POWER MOSFET

N-CHANNEL

ABSOLUTE MAXIMUM RATING:

Drain – Source Voltage

Drain – Gate Voltage

Drain Current – Continuous

Drain Current – Pulsed

Gate – Source Voltage

Power Dissipation

Inductive Current

Operating and Storage Temperature

Lead Temperature From Case

VDSS

VDGR

ID

IDM

VGS

PD

IL

TJ & Tstg

TL

900

4.0

18

±20

125

-65 to +150

275

Vdc

Adc

Vdc

Watts

Adc

°C

ELECTRICAL CHARACTERISTICS TA @ 25°C

°

Parameters

Symbol

Test Conditions

Drain Source

BVDSS ID = .25mA

Breakdown Voltage

Gate Threshold Voltage VGS(th) ID = 1.0mA

ID = 1.0mA, TJ = 100°C

Gate – Body Leakage

IGSS

VGS = 20V

Current

Zero Gate Voltage

IDSS

VDS = 900V

Drain Current

VDS = 720V, T J = 125°C

On State Drain Current

ID(on)

Drain Source On

Resistance

Forward

Transconductance

Drain-Source On-

Voltage

Drain Source On-

Voltage

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

rDS(on)

gFS

VDS(on)

Ciss

Coss

Crss

VDS = 25V, f = 1 MHz

VDS = 10V, ID = 2.0A,

ID =4.0A

ID =2.0A, TC = 100°C

Min

900

2.0

1.5

Typ

Max

Unit

Vdc

nA

mA

Adc

Ohms

4.5

4.0

500

0.25

1.0

2.0

16

14

mhos

Vdc

1500 pF

150

60

pF

Page 1 of 2

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