MwT-17Q3
DC –4 GHz Packaged FET
Data Sheet
June 2006
Features:
•
•
Ideal for DC – 4 GHz High Linearity / High Dynamic Range Applications
Excellent RF Performance:
o
45 dBm IP3
o
70 dBc ACPR
o
28.5 dBm P1dB
o
14 dB SSG @ 2000 MHz
o
1.3 dB NF @ 2000 MHz
MTTF > 100 years @ channel temperature 150ºC
Lead Free RoHS Compliant Surface-Mount QFN3X3 Package
•
•
Description:
The MwT-17Q3 is a high linearity GaAs MESFET device in low cost QFN3X3 package that is ideally suited for high linearity
driver, PA (Power Amplifier), and high dynamic range LNA applications. The applications include 2G, 2.5G, and 3G wireless
infrastructure standards, such as GSM, TDMA, CDMA, Edge, CDMA2000, WCDMA, TD-SCDMA, and UMTS base stations. This
product is also idea for high data rate wireless LAN infrastructure applications, such as high QAM rate 802.11 WiFi and 802.16
WiMax base stations and APs (Access Points). In additional, the product can be used for point-to-point microwave
communications links. The third order intercept performance of the MwT-17Q3 is excellent, typically 18 dB above the 1 dB power
gain compression point. The noise figure is as low as 0.8 dB at 900 MHz. The chip is produced using MwT's proprietary high
linearity device design. It also uses MwT reliable metallization process. All chips are passivated using MwT's patented "Diamond-
Like Carbon" process for increased durability.
Electrical Specifications:
Parameter
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure
Parameter
Test Frequency
Gain
Output IP3
Noise Figure
(1)
1.
Noise Figure is taken at Ids=100mA.
Vds=7.0V, Ids=500mA, Ta=25
°
C, Zo=50 ohm
Target for Driver and PA applications (Vds=6.5V, Ids=200mA, Ta=25
°C)
Units
MHz
dB
dB
dB
dBm
dBm
dB
Units
MHz
dB
dBm
dB
900
18
10
10
28.5
45
3
Typical Data
1950
2500
14
11
10
10
8
9
28.5
28.5
45
45
3
4
Typical Data
1950
2500
16
13
43
44
1.3
1.5
3500
10
9
9
28.5
45
4
Target for High Dynamic Range and Low Noise Applications (Vds=5V, Ids=200mA, Ta=25
°C)
900
18
43
0.8
3500
10
44
2.2
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
Please visit MwT website
www.mwtinc.com
for information on other MwT MMIC products.
MwT-17Q3
DC –4 GHz Packaged FET
Data Sheet
June 2006
DC Specifications
:
SYMBOL
IDSS
Gm
Vp
BVGSO
BVGDO
Rth
(Ta = 25ºC)
UNITS
mA
mS
V
V
V
°C/W
-6.0
-9.0
MIN
440
380
-2.5
-12.0
-12.0
30
-5.0
TYP
MAX
680
PARAMETERS & CONDITIONS
Saturated Drain Current
Vds=3.0 V Vgs=0.0 V
Transconductance
Vds=2.0 V Vgs=0.0 V
Pinch-off Voltage
Vds=3.0 V Ids=16.0 mA
Gate-to-Source Breakdown Voltage
Igs= -2.4 mA
Gate-to-Drain Breakdown Voltage
Igd= -2.4 mA
Thermal Resistance
MwT-17Q3 Noise Parameters
Freq.
MHz
910
2000
2500
3000
3500
Fmin
dB
0.8
1.2
1.3
1.5
Γo
Mag.
Ang
0.18
0.3
0.25
0.27
75
138
164
175
Mw T-17Q3 dB(S21) & MSG
R/50
0.14
0.13
0.12
0.12
0.11
Gain (dB)
40.0
30.0
20.0
10.0
0.0
0
1
2
3
Freq (GHz)
4
dB(S21)
MSG
1.7
0.29
180
(Ids=100mA, Vds=5V)
5
6
QFN Outline Diagram
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
Please visit MwT website
www.mwtinc.com
for information on other MwT MMIC products.
MwT-17Q3
DC –4 GHz Packaged FET
Data Sheet
June 2006
Typical Scattering Parameters
:
(Vds=6.5V, Ids=200mA, Ta =25°C Reference Planes
F [GHz]
S11
S21
Mag
Ang
Mag
Ang
0.250
0.883 -62.592
13.372 145.807
0.500
0.822 -101.770 9.977 124.388
0.750
0.788 -125.905 7.610 111.294
1.000
0.772 -141.758 6.104 102.405
1.250
0.765 -153.729
5.130 95.579
1.500
0.762 -163.638
4.378 88.965
1.750
0.762 -172.772
3.909 84.423
2.000
0.760 178.628
3.503 77.228
2.250
0.761 170.294
3.103 72.602
2.500
0.765 162.141
2.867 67.380
2.750
0.768 154.540
2.561 61.985
3.000
0.772 147.101
2.384 57.569
3.250
0.779 140.309
2.140 51.937
3.500
0.781 133.919
1.966 49.164
3.750
0.781 128.561
1.859 45.298
4.000
0.782 123.650
1.687 40.539
4.250
0.788 119.391
1.576 38.185
4.500
0.792 114.854
1.477 35.447
4.750
0.796 110.082
1.413 30.992
5.000
0.795 105.529
1.291 28.392
5.250
0.792 100.361
1.271 24.881
5.500
0.796
95.934
1.170 19.496
5.750
0.799
90.277
1.125 18.186
6.000
0.804
84.180
1.088 13.075
at Leads)
S12
Mag
Ang
0.030 54.281
0.042 42.491
0.049 36.904
0.051 35.628
0.056 35.655
0.056 35.370
0.060 38.592
0.063 35.009
0.063 38.580
0.067 37.582
0.067 38.516
0.068 38.547
0.069 41.708
0.072 41.931
0.072 42.125
0.075 45.268
0.072 45.630
0.080 51.701
0.086 49.126
0.088 51.114
0.096 49.424
0.096 45.481
0.105 48.822
0.112 46.367
S22
Mag
0.199
0.205
0.207
0.207
0.205
0.201
0.198
0.196
0.201
0.210
0.224
0.238
0.257
0.276
0.295
0.313
0.332
0.358
0.378
0.394
0.403
0.410
0.426
0.446
Ang
-61.148
-99.716
-120.156
-132.755
-141.214
-149.045
-156.773
-165.448
-175.051
174.935
165.112
156.386
148.369
141.018
134.092
128.716
125.490
122.346
118.908
114.941
110.320
104.083
98.804
91.560
Absolute Maximum Ratings:
SYMBOL
Vds
Vgs
Ids
Igs
Pdiss
Pin max
Tch
Tstg
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
DC Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
(Ta= 25
°C)*
UNITS
V
V
mA
mA
W
dBm
ºC
ºC
ABSOLUTE MAXIMUM
8
-6 to +0.8
400
3
2.5
+28
150
-60 to 150
*Operation
of this device above any one of these parameters may cause permanent damage.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
Please visit MwT website
www.mwtinc.com
for information on other MwT MMIC products.
京公网安备 11010802033920号
EEWORLD
