MS1076G datasheet, PDF - EEWORLD Datasheet

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MS1076G: DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4; CategoryDiscrete semiconductor The transistor; File Size87KB，6 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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MS1076G Overview

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4

MS1076G Parametric

Parameter Name	Attribute value
Maker	Microsemi
package instruction	FLANGE MOUNT, O-PRFM-F4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
Maximum collector current (IC)	16 A
Collector-emitter maximum voltage	35 V
Configuration	SINGLE
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	O-PRFM-F4
Number of components	1
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	RADIAL
Transistor component materials	SILICON

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MS1076

RF & MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

Features

•

30 MHz

28 VOLTS

GOLD METALLIZATION

OUT

= 220 W PEP

= 12 dB GAIN MINIMUM

COMMON EMITTER CONFIGURATION

DESCRIPTION:

The MS1076 is a 28 volt epitaxial NPN silicon planar transistor

designed primarily for SSB and VHF communications. This

device utilizes an emitter ballasted die geometry for maximum

ruggedness and reliability.

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C)

Symbol

CBO

CEO

EBO

DISS

STG

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Device Current

Power Dissipation

Junction Temperature

Storage Temperature

Value

4.0

250

+200

- 65 to +150

Unit

°C

Thermal Data

TH(J-C)

Junction - Case Thermal Resistance

0.7

°C/W

Rev A: October 2009

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Visit our web site at

www.microsemi.com

or contact our factory direct.

MS1076G Related Products

	MS1076G	MS1076H	MS1076F	MS1076I	MS1076E	MS1076C	MS1076D	MS1076A
Description	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4
Maker	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi
package instruction	FLANGE MOUNT, O-PRFM-F4	FLANGE MOUNT, O-PRFM-F4	FLANGE MOUNT, O-PRFM-F4	FLANGE MOUNT, O-PRFM-F4	FLANGE MOUNT, O-PRFM-F4	FLANGE MOUNT, O-PRFM-F4	FLANGE MOUNT, O-PRFM-F4	FLANGE MOUNT, O-PRFM-F4
Contacts	4	4	4	4	4	4	4	4
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
Maximum collector current (IC)	16 A	16 A	16 A	16 A	16 A	16 A	16 A	16 A
Collector-emitter maximum voltage	35 V	35 V	35 V	35 V	35 V	35 V	35 V	35 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 code	O-PRFM-F4	O-PRFM-F4	O-PRFM-F4	O-PRFM-F4	O-PRFM-F4	O-PRFM-F4	O-PRFM-F4	O-PRFM-F4
Number of components	1	1	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4	4	4
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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