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MS1076E

Description
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4
CategoryDiscrete semiconductor    The transistor   
File Size87KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

MS1076E Overview

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4

MS1076E Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionFLANGE MOUNT, O-PRFM-F4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
Maximum collector current (IC)16 A
Collector-emitter maximum voltage35 V
ConfigurationSINGLE
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeO-PRFM-F4
Number of components1
Number of terminals4
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
Transistor component materialsSILICON
MS1076
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
30 MHz
28 VOLTS
GOLD METALLIZATION
P
OUT
= 220 W PEP
G
P
= 12 dB GAIN MINIMUM
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1076 is a 28 volt epitaxial NPN silicon planar transistor
designed primarily for SSB and VHF communications. This
device utilizes an emitter ballasted die geometry for maximum
ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
70
35
4.0
16
250
+200
- 65 to +150
Unit
V
V
V
A
W
°C
°C
Thermal Data
R
TH(J-C)
Junction - Case Thermal Resistance
0.7
°C/W
Rev A: October 2009
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.

MS1076E Related Products

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Description RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, FM-4
Maker Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi
package instruction FLANGE MOUNT, O-PRFM-F4 FLANGE MOUNT, O-PRFM-F4 FLANGE MOUNT, O-PRFM-F4 FLANGE MOUNT, O-PRFM-F4 FLANGE MOUNT, O-PRFM-F4 FLANGE MOUNT, O-PRFM-F4 FLANGE MOUNT, O-PRFM-F4 FLANGE MOUNT, O-PRFM-F4
Contacts 4 4 4 4 4 4 4 4
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
Maximum collector current (IC) 16 A 16 A 16 A 16 A 16 A 16 A 16 A 16 A
Collector-emitter maximum voltage 35 V 35 V 35 V 35 V 35 V 35 V 35 V 35 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JESD-30 code O-PRFM-F4 O-PRFM-F4 O-PRFM-F4 O-PRFM-F4 O-PRFM-F4 O-PRFM-F4 O-PRFM-F4 O-PRFM-F4
Number of components 1 1 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4 4 4
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location RADIAL RADIAL RADIAL RADIAL RADIAL RADIAL RADIAL RADIAL
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
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