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IRF6795MPBF_10

Description
32 A, 25 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size245KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRF6795MPBF_10 Overview

32 A, 25 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET

IRF6795MPBF_10 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage25 V
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT PACKAGE-8
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeCHIP CARRIER
surface mountYes
Terminal formNO LEAD
terminal coatingTIN SILVER COPPER
Terminal locationBOTTOM
Packaging MaterialsUNSPECIFIED
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption2.8 W
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current32 A
Rated avalanche energy190 mJ
Maximum drain on-resistance0.0018 ohm
Maximum leakage current pulse250 A
PD - 97321C
HEXFET
®
Power MOSFET plus Schottky Diode
‚
l
RoHS Compliant
Containing No Lead and Halogen Free
l
IRF6795MPbF
IRF6795MTRPbF
V
R
R

Typical values (unless otherwise specified)
DSS
GS
DS(on)
DS(on)
Integrated Monolithic Schottky Diode
25V max ±20V max 1.4mΩ@ 10V 2.4mΩ@ 4.5V
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible

Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
l
Ultra Low Package Inductance
35nC
10nC
4.8nC
34nC
27nC
1.8V
l
Optimized for High Frequency Switching

l
Ideal for CPU Core DC-DC Converters
l
Optimized for Sync. FET socket of Sync. Buck Converter
l
Low Conduction and Switching Losses
l
Compatible with existing Surface Mount Techniques

l
100% Rg tested
DirectFET™ ISOMETRIC
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

V
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6795MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6795MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6795MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
6
Typical RDS(on) (mΩ)
Max.
25
±20
32
25
160
250
190
25
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
g
e
@ 10V
e
@ 10V
f
h
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
10
20
30
ID= 25A
A
Ãg
mJ
A
5
4
3
2
1
0
2
4
6
8
10
12
14
ID = 32A
VDS= 20V
VDS= 13V
T J = 125°C
T J = 25°C
16
18
20
40
50
60
70
80
90
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:

Click on this section to link to the appropriate technical paper.
‚
Click on this section to link to the DirectFET Website.
ƒ
Surface mounted on 1 in. square Cu board, steady state.
Q G Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs. Gate-to-Source Voltage
„
T
C
measured with thermocouple mounted to top (Drain) of part.
…
Repetitive rating; pulse width limited by max. junction temperature.
†
Starting T
J
= 25°C, L = 0.60mH, R
G
= 25Ω, I
AS
= 25A.
www.irf.com
1
02/10/2010

IRF6795MPBF_10 Related Products

IRF6795MPBF_10 IRF6795MTRPbF IRF6795MPbF
Description 32 A, 25 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET 32 A, 25 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET 32 A, 25 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET
Number of terminals 3 3 3
surface mount Yes YES YES
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM BOTTOM
Shell connection DRAIN DRAIN DRAIN
Number of components 1 1 1
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Is it lead-free? - Lead free Lead free
Is it Rohs certified? - conform to conform to
Maker - International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction - CHIP CARRIER, R-XBCC-N3 CHIP CARRIER, R-XBCC-N3
Contacts - 8 8
Reach Compliance Code - compli compli
ECCN code - EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) - 190 mJ 190 mJ
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 25 V 25 V
Maximum drain current (Abs) (ID) - 160 A 160 A
Maximum drain current (ID) - 32 A 32 A
Maximum drain-source on-resistance - 0.0018 Ω 0.0018 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code - R-XBCC-N3 R-XBCC-N3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 150 °C 150 °C
Package body material - UNSPECIFIED UNSPECIFIED
Package shape - RECTANGULAR RECTANGULAR
Package form - CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) - 260 260
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 75 W 75 W
Maximum pulsed drain current (IDM) - 250 A 250 A
Certification status - Not Qualified Not Qualified
Maximum time at peak reflow temperature - 30 40
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