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IRFH5300TRPBF

Description
40 A, 30 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size340KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRFH5300TRPBF Overview

40 A, 30 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET

IRFH5300TRPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeQFN
package instruction6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Contacts8
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)420 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)100 A
Maximum drain current (ID)40 A
Maximum drain-source on-resistance0.0021 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-N5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)250 W
Maximum pulsed drain current (IDM)400 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD -97410
IRFH5300PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
30
1.4
50
1.3
100
V
m
:
Q
g (typical)
R
G (typical)
I
D
nC
(@T
c(Bottom)
= 25°C)
h
:
A
PQFN 5X6 mm
Applications
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
Benefits
Low R
DSon
(≤ 1.4mΩ)
Low Thermal Resistance to PCB (≤ 0.5°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
results in Increased Power Density
Industry-Standard Pinout
Multi-Vendor Compatibility
Easier Manufacturing
Compatible with Existing Surface Mount Techniques
Environmentally Friendlier
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Increased Reliability
Orderable part number
IRFH5300TRPBF
IRFH5300TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@ T
C(Bottom)
= 25°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
30
± 20
40
32
100
100
400
3.6
250
Units
V
g
g
c
h
h
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
0.029
-55 to + 150
Notes

through
†
are on page 8
www.irf.com
1
9/17/09

IRFH5300TRPBF Related Products

IRFH5300TRPBF IRFH5300PBF IRFH5300TR2PBF
Description 40 A, 30 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET 40 A, 30 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET 40 A, 30 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET
Shell connection DRAIN DRAIN DRAIN
Number of components 1 1 1
Number of terminals 5 5 5
surface mount YES Yes YES
Terminal form NO LEAD NO NO LEAD
Terminal location DUAL pair DUAL
transistor applications SWITCHING switch SWITCHING
Transistor component materials SILICON silicon SILICON
Is it lead-free? Lead free - Lead free
Is it Rohs certified? conform to - conform to
Maker International Rectifier ( Infineon ) - International Rectifier ( Infineon )
Parts packaging code QFN - QFN
package instruction 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 - SMALL OUTLINE, R-PDSO-N5
Contacts 8 - 8
Reach Compliance Code unknow - unknow
ECCN code EAR99 - EAR99
Other features HIGH RELIABILITY - HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas) 420 mJ - 420 mJ
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V - 30 V
Maximum drain current (Abs) (ID) 100 A - 100 A
Maximum drain current (ID) 40 A - 40 A
Maximum drain-source on-resistance 0.0021 Ω - 0.0021 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-N5 - R-PDSO-N5
JESD-609 code e3 - e3
Humidity sensitivity level 1 - 1
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Maximum operating temperature 150 °C - 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - 260
Polarity/channel type N-CHANNEL - N-CHANNEL
Maximum power dissipation(Abs) 250 W - 250 W
Maximum pulsed drain current (IDM) 400 A - 400 A
Certification status Not Qualified - Not Qualified
Terminal surface Matte Tin (Sn) - Matte Tin (Sn)
Maximum time at peak reflow temperature 40 - 30
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