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HM1E-65764FDB

Description
Standard SRAM, 8KX8, 20ns, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28
Categorystorage    storage   
File Size250KB,9 Pages
ManufacturerAtmel (Microchip)
Download Datasheet Parametric View All

HM1E-65764FDB Overview

Standard SRAM, 8KX8, 20ns, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28

HM1E-65764FDB Parametric

Parameter NameAttribute value
MakerAtmel (Microchip)
Parts packaging codeDIP
package instruction0.600 INCH, CERAMIC, DIP-28
Contacts28
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time20 ns
JESD-30 codeR-GDIP-T28
memory density65536 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize8KX8
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height5.89 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width15.24 mm
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