ES1M
SUPER FAST SURFACE
MOUNT RECTIFIERS
PRODUCT SUMMARY
Reverse Voltage 50 to 1000 Volts
Forward current 1.0 Ampere
FEATURES
For surface mounted application
Low profile package
Built-in strain relief,
Ideal for automated placement
Easy pick and place
Superfast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
o
250 C /10 seconds at terminals
Plastic material used carries Underwriters Laboratory
Classification 94V-O
MECHANICAL DATA
Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Weight: 0.002 ounce, 0.064 gram
Pb-free; RoHS-compliant
07/04/2007 Rev.1.00
www.SiliconStandard.com
1
ES1M
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
S ee F i g. 1
Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC Method)
Maximum instantaneous forward voltage @ 1.0A
Maximum DC reverse current
at rated DC blocking voltage
@ T
A
=25
o
C
@ T
A
=100
o
C
Symbols
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
R
θ
JL
T
J
T
STG
10
85
35
-55 to +150
-55 to +150
0.95
5.0
100
35
8
o
o
ES
1A
50
35
50
ES
1B
100
70
100
ES
1C
150
105
150
ES
1D
200
140
200
ES
1F
300
210
300
1.0
ES
1G
400
280
400
ES
1J
600
420
600
ES
1K
800
560
800
ES
1M
1000
700
1000
Units
Volts
Volts
Volts
Amp
30.0
1.3
1.7
Amps
Volts
uA
uA
nS
pF
C/W
o
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Typical thermal resistance (Note 3)
Operating junction temperature range
Storage temperature range
Notes:
C
C
o
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied V
R
=4.0 Volts
3. P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0mm) Copper Pad Area.
07/04/2007 Rev.1.00
www.SiliconStandard.com
2
ES1M
RATINGS AND CHARACTERISTIC CURVES
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
07/04/2007 Rev.1.00
www.SiliconStandard.com
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