AMMP-6441
36 - 40 GHz, 0.4W Power Amplifier in SMT Package
Data Sheet
Description
The AMMP-6441 MMIC is a 0.4W power amplifier in a
surface mount package designed for use in transmitters
that operate at frequencies between 36GHz and 40GHz. In
the operational band, it provides 26 dBm of output power
(P-1dB) and 20dB of small-signal gain.
Features
5x5mm SMT package
0.4 watt output power
50
match on input and output
Typical Performance (Vd=5V, Idsq=0.45A)
Frequency range 36 to 40 GHz
Small signal Gain of 20dB
Output power @P-1 of 26dBm (Typ.)
Input and Output return losses -10dB
Applications
LMDS & Pt-Pt mmW Long Haul
Microwave Radio systems
WLL and MMDS loops
Package Diagram
Vg
1
Vd1
2
Vd2
3
Functional Block Diagram
1
2
3
Pin
1
2
3
4
5
6
7
8
Function
Vg
Vd1
Vd2
RF OUT
Vd2
Vd1
Vg
RF IN
RF IN
8
4
RF OUT
8
4
7
Vg
6
Vd1
5
7
Vd2
Note:
1. This MMIC uses depletion mode pHEMT devices.
Negative supply is used for DC gate biasing.
6
5
RoHS-Exemption
Attention: Observe Precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A): 40V
ESD Human Body Model (Class 0): 150V
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Please refer to hazardous substances table on page 10.
Note: MSL Rating = Level 2A
Electrical Specifications
1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.
2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6120 published specifications.
3. This final package part performance is verified by a functional test correlated to actual performance at one or more
frequencies.
4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may
be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt)
matching.
Table 1. RF Electrical Characteristics
TA=25°C, Vd=5.0V, Idq=0.45V, Vg=-1V, Zo=50 Ω
Parameter
Operational Frequency, Freq
Small-signal Gain, Gain
Output Power at 1dB Gain Compression, P-1dB
Relative Third Order Inter-modulation level
(Δf=10MHz, Po=+12dBm, SCL), IM3
Input Return Loss, Rlin
Output Return Loss, Rlout
Reverse Isolation, Isolation
Min
36
18
24.5
Typ.
20
26
-38
10
10
45
Max
40
Unit
GHz
dB
dBm
dBc
dB
dB
dB
Table 2. Recommended Operating Range
1. Ambient operational temperature TA = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal
Resistance at backside temperature (Tb) = 25°C calculated from measured data.
Description
Drain Supply Current, Idq
Gate Supply Operating Voltage, Vg
-1.3
Min.
Typical
450
-1
Max.
-0.7
Unit
mA
V
Comments
Vd = 5V, Vg set for Id Typical
Idq=450mA
Table 3. Thermal Properties
Parameter
Channel Temperature, Tch
Thermal Resistance
(Channel-to-Base Plate),
ch-bs
Channel-to-backside Thermal Resistance Tchannel(Tc)=34°C
Thermal Resistance at backside temperature Tb=25°C
Test Conditions
Value
Tch=150 °C
Jc
= 34 °C/W
Note:
1. Assume SnPb soldering to an evaluation RF board at 85 °C base plate temperatures. Worst case is at saturated output power when DC power
consumption rises to 5.24W with 0.9W RF power delivered to load. Power dissipation is 4.34W and the temperature rise in the channel is 72.9 °C. In
this condition, the base plate temperature must be remained below 82.1 °C to maintain maximum operating channel temperature below 155 °C.
Absolute Minimum and Maximum Ratings
Table 4. Minimum and Maximum Ratings
Description Pin
Drain Supply Voltage, Vd
Gate Supply Voltage, Vg
Power Dissipation, P¬D
CW Input Power, Pin
Channel Temperature
Storage Temperature
Maximum Assembly Temperature
-65
-2
Min.
Max.
5.5
0
3
20
+150
+155
+260
Unit
V
Comments
dBm
°C
°C
°C
CW
30 second maximum
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2
Typical Distribution Charts
LSL
LSL
20
21
22
23
24
18
19
20
21
22
Figure A. Gain @ 37GHz, Nominal = 23, LSL = 18
Figure B. Gain @ 38GHz, Nominal = 21, LSL = 18
LSL
LSL
18
19
20
21
22
25
26
27
28
Figure C. Gain @ 40GHz, Nominal = 20, LSL = 18
Figure D. P1dB @ 37GHz, Nominal = 27, LSL = 24.5
LSL
LSL
25
26
27
28
29
25
26
27
28
29
Figure E. P1dB @ 38GHz, Nominal = 27, LSL = 24.5
Figure F. P1dB @ 40GHz, Nominal = 28, LSL = 24.5
3
Typical Performance
(Data was obtained from a 2.4mm connector based test fixture and includes connector and board losses. Connector and
board loss is approximately 0.5dB at input and output ports for an approximate total of 1dB.)
(T
A
= 25°C, Vdd=5V, Idq=0.45 A, V
g
=-1 V, Z
in
= Z
out
= 50
)
30
25
20
S21[dB]
15
10
5
0
30
32
34
36
38 40 42 44
Frequency [GHz]
46
48
50
S21[dB]
S12[dB]
-30
-35
Return
Loss [dB]
-40
-45
-50
-55
-60
S12
[dB]
0
-5
-10
-15
-20
-25
30
32
34
36
38 40 42 44
Frequency [GHz]
46
48
50
S11[dB]
S22[dB]
Figure 1. Typical gain and reverse Isolation
Figure 2. Typical return Loss (input and output)
30
25
P1, P3 [dBm], PAE[%]
20
15
10
5
0
34
35
36
37
38
Frequency[GHz]
39
40
41
P-1
PAE@P1
P-3
PAE@P3
Noise
Figure [dB]
10
8
6
4
2
0
35
37
39
41
Frequency [GHz]
43
45
Figure 3. Typical output power (P-1 and P-3) vs. frequency
Figure 4. Typical noise figure
0
-10
Relative
IM3 Level [dBc]
-20
-30
-40
-50
-60
-70
34
35
36
37
38
Frequency [GHz]
39
40
41
SCL=18[dBm]
SCL=12dBm]
SCL=4[dBm]
40
35
Po[dBm], and, PAE[%]
30
25
20
15
10
5
0
-5
-25
-20
-15
-10
-5
Pin [dBm]
0
5
10
Pout(dBm)
PAE[%]
Id(total)
850
800
750
700
600
550
500
450
400
Ids [mA]
650
Figure 5. Typical third order inter-modulation product level vs. frequency at
different single carrier output level (SCL)
4
Figure 6. Typical output power, PAE, and total drain current versus Input
power at 40GHz
0
-10
-20
IM3 Level [dBc]
-30
-40
-50
-60
-70
-80
0
2
4
6
8
10 12 14 16 18 20 22
Po [dBc,
SCL]
IM3_h [dBc]
IM3_l [dBc]
Ids_total
490
485
480
Ids [mA]
475
470
465
460
455
450
IM3 Level [dBc]
0
-10
-20
-30
-40
-50
-60
-70
-80
0
2
4
6
8
10 12 14 16 18 20 22
Po [dBc,
SCL]
IM3_h [dBc]
IM3_l [dBc]
Ids_total
490
485
480
Ids [mA]
Ids [mA]
Ids [mA]
475
470
465
460
455
450
Figure 7. Typical IM3 level and Ids vs. single carrier output level at 35GHz
Figure 8. Typical IM3 level and Ids vs. single carrier output level at 36GHz
0
-10
-20
IM3 Level [dBc]
-30
-40
-50
-60
-70
-80
0
2
4
6
8
IM3_h [dBc]
IM3_l [dBc]
Ids_total
490
485
480
Ids [mA]
475
470
465
460
455
450
10 12 14 16 18 20 22
Po [dBc,
SCL]
IM3 Level [dBc]
0
-10
-20
-30
-40
-50
-60
-70
-80
0
2
4
6
8
IM3_h [dBc]
IM3_l [dBc]
Ids_total
490
485
480
475
470
465
460
455
450
10 12 14 16 18 20 22
Po [dBc,
SCL]
Figure 9. Typical IM3 level and Ids vs. single carrier output level at 37GHz
Figure 10. Typical IM3 level and Ids vs. single carrier output level at 38GHz
0
-10
-20
IM3 Level [dBc]
-30
-40
-50
-60
-70
-80
0
2
4
6
8
10 12 14 16 18 20 22
Po [dBc,
SCL]
IM3_h [dBc]
IM3_l [dBc]
Ids_total
490
485
480
IM3 Level [dBc]
Ids [mA]
475
470
465
460
455
450
0
-10
-20
-30
-40
-50
-60
-70
-80
0
2
4
6
8
10 12 14 16 18 20 22
Po [dBc,
SCL]
IM3_h [dBc]
IM3_l [dBc]
Ids_total
490
485
480
475
470
465
460
455
450
Figure 11. Typical IM3 level and Ids vs. single carrier output level at 39GHz
Figure 12. Typical IM3 level and Ids vs. single carrier output level at 40GHz
5
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