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SMAJ30A

Description
TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,30V V(RWM),DO-214AC / SMA
Categorysemiconductor    Discrete semiconductor   
File Size617KB,4 Pages
ManufacturerSSC
Websitehttp://www.siliconstandard.com/
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SMAJ30A Overview

TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,30V V(RWM),DO-214AC / SMA

SMAJ30A Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeTRANS voltage SUPPRESSOR diode
SMAJ Series
Transient Voltage Suppressors
PRODUCT SUMMARY
Stand-off Voltage ratings from 5.0V to 440V
Peak pulse power 400W in SMA surface-mount package
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Optimized for LAN protection applications
Ideal for ESD protection of data lines in accordance with
IEC 1000-4-2 (IEC801-2)
Ideal for EFT protection of data lines in accordance with
IEC 1000-4-4 (IEC801-4)
Low profile package with built-in strain relief for surface-mount
Glass passivated junction
Low incremental surge resistance, excellent clamping capability
Peak pulse power capability of 400W with a 10/1000us waveform,
repetition rate (duty cycle): 0.01% (300W above 78V)
Very fast response time
High temperature soldering guaranteed:
260°C for 10 seconds at terminals
MECHANICAL DATA
Case: JEDEC DO-214AC (SMA) molded plastic over passivated chip
Terminals: Matte-Sn plated, solderable per MIL-STD-750,
Method 2026
Polarity: For uni-directional types the band denotes the cathode, which
is positive with respect to the anode under normal TVS operation.
Mounting position: Any
Weight: 0.002oz., 0.064g
Pb-free; RoHS-compliant
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. SMAJ10CA). Electrical characteristics apply in both directions.
MAXIMUM RATINGS
Rating at 25°C ambient temperature unless otherwise specified.
Parameter
Peak pulse power dissipation with
a 10/1000
u
s waveform
(1,2)
(see Fig. 1)
Peak pulse current with a 10/1000
u
s waveform
(1)
Peak forward surge current, 8.3ms single half sine-wave
uni-directional only
(2)
Typical thermal resistance, junction to ambient
(3)
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
Symbol
P
PPM
I
PPM
I
FSM
R
θ
JA
R
θ
JL
T
J
, T
STG
Value
400
See Next Table
40
120
30
-55 to +150
o
Unit
W
A
A
C/W
C/W
o
o
C
Notes:
1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2. Rating is 300W above 78V
2. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal
3. Mounted on minimum recommended pad layout
9/21/2006 Rev.4.01
www.SiliconStandard.com
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