PDM41024
1 Megabit Static RAM
128K x 8-Bit
Features
n
1
2
3
4
5
6
7
Description
The PDM41024 is a high-performance CMOS static
RAM organized as 131,072 x 8 bits. Writing is
accomplished when the write enable (WE) and the
chip enable (CE1) inputs are both LOW and CE2 is
HIGH. Reading is accomplished when WE and CE2
remain HIGH and CE1 and OE are both LOW.
The PDM41024 operates from a single +5V power
supply and all the inputs and outputs are fully TTL-
compatible. The PDM41024 comes in two versions:
the standard power version (SA) and the low power
version (LA). The two versions are functionally the
same and differ only in their power consumption.
The PDM41024 is available in a 32-pin plastic TSOP
(I), and a 300-mil and 400-mil plastic SOJ.
High-speed access times
Com’l: 10, 12 and 15 ns
Ind’l: 12 and 15 ns
Low power operation (typical)
- PDM41024SA
Active: 450 mW
Standby: 50 mW
- PDM41024LA
Active: 400 mW
Standby: 25mW
Single +5V (±10%) power supply
TTL-compatible inputs and outputs
Packages
Plastic SOJ (300 mil) - TSO
Plastic SOJ (400 mil) - SO
Plastic TSOP (I)- T
n
n
n
n
Functional Block Diagram
A
0
•
•
•
•
•
A
16
Decoder
Addresses
•
•
•
•
•
•
Memory
Matrix
8
9
10
I/O
0
•
•
I/O
7
• • • • •
Input
Data
Control
Column I/O
•
•
11
12
1
CE1
CE2
WE
OE
•
Control
Rev. 3.3 - 4/09/98
PDM41024
Pin Configuration
TSOP (I)
A11
A9
A8
A13
WE
CE2
A15
Vcc
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
Vss
I/O2
I/O1
I/O0
A0
A1
A2
A3
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SOJ
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
Pin Description
Name
A16-A0
I/O7-I/O0
OE
WE
CE1, CE2
NC
V
CC
V
SS
Description
Address Inputs
Data Inputs/Outputs
Output Enable Input
Write Enable Input
Chip Enable Inputs
No Connect
Power (+5V)
Ground
Truth Table
(1)
OE
X
X
L
X
H
WE
X
X
H
L
H
CE1
H
X
L
L
L
CE2
X
L
H
H
H
I/O
Hi-Z
Hi-Z
D
OUT
D
IN
Hi-Z
MODE
Standby
Standby
Read
Write
Output Disable
NOTE: 1. H = V
IH
, L = V
IL
, X = DON’T CARE
Absolute Maximum Ratings
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
T
j
Rating
Terminal Voltage with Respect to V
SS
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Maximum Junction Temperature
(2)
Com’l.
–0.5 to +7.0
–55 to +125
–55 to +125
1.0
50
125
Ind.
–0.5 to +7.0
–65 to +135
–65 to +150
1.0
50
145
Unit
V
°C
°C
W
mA
°C
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating con-
ditions for extended periods may affect reliability.
2. Appropriate thermal calculations should be performed in all cases and specifically for
those where the chosen package has a large thermal resistance (e.g., TSOP). The cal-
culation should be of the form
: T
j
= T
a
+ P *
θ
ja
where T
a
is the ambient temperature, P
is average operating power and
θ
ja
the thermal resistance of the package. For this
product, use the following
θ
ja
values:
SOJ: 72
o
C/W
TSOP: 95
o
C/W
2
4/09/98 - Rev. 3.3
PDM41024
Recommended DC Operating Condition
Symbol
V
CC
V
SS
Industrial
Commercial
Parameter
Supply Voltage
Supply Voltage
Ambient Temperature
Ambient Temperature
Min.
4.5
0
–40
0
Typ.
5.0
0
25
25
Max.
5.5
0
85
70
Unit
V
V
°C
°C
1
2
3
DC Electrical Characteristics
(V
CC
= 5.0V
±
10%)
PDM41024SA
Symbol
I
LI
I
LO
Parameter
Input Leakage Current
Output Leakage Current
Test Conditions
V
CC
= MAX., V
IN
= V
SS
to V
CC
V
CC
= MAX.,
CE1 = V
IH
and CE2 = V
IL,
V
OUT
= V
SS
to V
CC
Com’l/
Ind.
Com’l/
Ind.
Min.
–5
–5
Max.
5
5
PDM41024LA
Min.
–1
–1
Max.
1
1
Unit
µA
µA
4
5
6
7
V
IL
V
IH
V
OL
V
OH
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
I
OL
= 8 mA, V
CC
= Min.
I
OL
= 10 mA, V
CC
= Min.
I
OH
= –4 mA, V
CC
= Min.
–0.5
(1)
2.2
—
—
2.4
0.8
6.0
0.4
0.5
—
–0.5
(1)
2.2
—
—
2.4
0.8
6.0
0.4
0.5
—
V
V
V
V
V
NOTE: 1. V
IL
(min) = –3.0V for pulse width less than 20 ns
Power Supply Characteristics
-10
Symbol
I
CC
Parameter
Operating Current
CE1 = V
IL
and CE2 = V
IH
f = f
MAX
= 1/t
RC
V
CC
= Max.
I
OUT
= 0 mA
I
SB
Standby Current
CE1 = V
IH
and CE2 = V
IL
f = f
MAX
= 1/t
RC
V
CC
= Max.
I
SB1
Full Standby Current
CE1
≥
V
HC
and CE2
≤
V
LC
f=0
V
CC
= Max.
V
IN
≥
V
CC
– 0.2V or
≤
0.2V
Power
SA
LA
Com’l.
250
230
-12
Com’l.
230
210
Ind.
240
220
-15
Com’l.
185
165
Ind.
195
175
8
9
10
11
12
3
SA
LA
SA
LA
80
75
20
10
70
65
20
10
70
65
25
10
55
50
10
5
55
50
15
10
SHADED AREAS = PRELIMINARY DATA
NOTES: All values are maximum guaranteed values.
V
LC
≤
0.2V, V
HC
≥
V
CC
– 0.2V
Rev. 3.3 - 4/09/98
PDM41024
Capacitance
(1)
(T
A
= +25°C, f = 1.0 MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Max.
8
8
Unit
pF
pF
NOTE:1. This parameter is determined by device characterization but is not production tested.
AC Test Conditions
Input pulse levels
Input rise and fall times
Input timing reference levels
Output reference levels
Output load
V
SS
to 3.0V
3 ns
1.5V
1.5V
See Figures 1 and 2
+5V
480Ω
D
OUT
255Ω
30 pF
D
OUT
255Ω
+5V
480Ω
5 pF
Figure 1. Output Load Equivalent
Figure 2. Output Load Equivalent
(for t
LZCE
, t
HZCE
, t
LZWE
, t
HZWE
, t
LZOE
,
t
HZOE
)
Delta tAA - ns
5
4
3
2
1
0
0
Typical Delta tAA vs Capacitive Loading
30
60
90
120
Additional Lumped Capacitive Loading (pF)
Figure 3.
4
4/09/98 - Rev. 3.3
PDM41024
Read Cycle No. 1
(4, 5)
t
RC
ADDR
1
2
DATA VALID
t
AA
t
OH
DOUT
PREVIOUS DATA VALID
Read Cycle No. 2
(2, 4, 6)
t
RC
3
4
5
t
LZCE
t
HZCE
t
AA
t
ACE
ADDR
CE1
CE2
OE
t
LZOE
D
OUT
t
AOE
t
HZOE
DATA VALID
6
7
8
-15
AC Electrical Characteristics
Description
READ Cycle
READ cycle time
Address access time
Chip enable access time
Output hold from address change
Chip enable to output in low Z
(1,3)
Chip disable to output in high Z
(1,2,3)
Chip enable to power up time
(3)
Chip disable to power down time
(3)
Output enable access time
Output enable to output in low Z
(1,3)
Output disable to output in high Z
(1,3)
Sym
t
RC
t
AA
t
ACE
t
OH
t
LZCE
t
HZCE
t
PU
t
PD
t
AOE
t
LZOE
t
HZOE
0
6
0
10
6
0
6
3
5
6
0
12
6
0
6
-10
(7)
-12
(7)
Min. Max. Min. Max. Min. Max. Units
10
10
10
3
5
6
0
15
6
12
12
12
3
5
7
15
15
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
9
10
11
12
5
SHADED AREA = PRELIMINARY DATA
Notes referenced are after Data Retention Table.
Rev. 3.3 - 4/09/98
RF/Wirelessly
京公网安备 11010802033920号
EEWORLD
