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1N4003G

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size228KB,2 Pages
ManufacturerSY
Websitehttp://www.shunyegroup.com/
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1N4003G Overview

SIGNAL DIODE

1N4003G Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSignal diode
1N4001G THRU 1N4007G
GLASS PASSIVATED SILICON RECTIFIER
Reverse Voltage -
50 to 1000 Volts
DO-41
Forward Current -
1.0 Ampere
FEATURES
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160(4.1)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-41 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.012
ounce, 0.33 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
1N
1N
1N
1N
1N
1N
1N
4001G 4002G 4003G 4004G 4005G 4006G 4007G
UNITS
VOLTS
VOLTS
VOLTS
Amp
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
C
J
R
q
JA
T
J
,
T
STG
30.0
1.1
5.0
50.0
15.0
50.0
-65 to +175
Amps
Volts
m
A
pF
C/W
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted
www.shunyegroup.com

1N4003G Related Products

1N4003G 1N4001G 1N4002G 1N4004G 1N4005G 1N4006G 1N4007G
Description SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
state ACTIVE ACTIVE ACTIVE DISCONTINUED ACTIVE - ACTIVE
Diode type Signal diode Signal diode SIGNAL DIODE Signal diode SIGNAL DIODE - Signal diode
Number of terminals - 2 - 2 2 - 2
Number of components - 1 - 1 1 - 1
Processing package description - Plastic, DO-41, 2 PIN - PLASTIC PACKAGE-2 GREEN, PLASTIC PACKAGE-2 - PLASTIC PACKAGE-2
packaging shape - round - round ROUND - round
Package Size - LONG FORM - LONG FORM LONG FORM - LONG FORM
Terminal form - Wire - Wire WIRE - Wire
Terminal location - AXIAL - AXIAL AXIAL - AXIAL
Packaging Materials - Plastic/Epoxy - Plastic/Epoxy PLASTIC/EPOXY - Plastic/Epoxy
structure - single - single SINGLE - single
Shell connection - isolation - isolation ISOLATED - isolation
Diode component materials - silicon - silicon SILICON - silicon
Maximum repetitive peak reverse voltage - 50 V - 400 V 600 V - 1000 V
Maximum average forward current - 1 A - 1 A 1 A - 1 A

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Index Files: 971  902  2505  1716  1737  20  19  51  35  41 
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