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DTA143ZM-C

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size464KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

DTA143ZM-C Overview

Small Signal Bipolar Transistor

DTA143ZM-C Parametric

Parameter NameAttribute value
MakerSECOS
package instructionSMALL OUTLINE, R-PDSO-F3
Reach Compliance Codecompliant
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 10
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
DTA143ZM / DTA143ZE
DTA143ZUA / DTA143ZCA / DTA143ZSA
Elektronische Bauelemente
PNP Digital Transistors (Built-in Resistors)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
Only the on/off conditions need to be set for
operation, making device design easy.
DTA143ZE (SOT-523)
DTA143ZUA(SOT-323)
Addreviated symbol:E13
DTA143ZM (SOT-723)
Addreviated symbol:113
DTA143ZCA (SOT-23)
EQUIVALENT CIRCUIT
Addreviated symbol:E13
DTA143ZSA (TO-92S)
Addreviated symbol:E13
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise noted)
Parameter
Supply Voltage
Input voltage
Output current
Power dissipation
Junction & Storage temperature
Symbol
V
CC
V
IN
I
O
P
D
T
J
, T
STG
Limits (DTA143Z□)
M
E
UA
-50
-30 ~ 5
-100
100
150
200
150, -55~150
300
CA
SA
Unit
V
V
mA
mW
°C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-May-2012 Rev. B
Page 1 of 2

DTA143ZM-C Related Products

DTA143ZM-C DTA143ZM DTA143ZSA-C
Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor
Maker SECOS SECOS SECOS
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code compliant compliant compliant
Other features BUILT IN BIAS RESISTANCE RATIO IS 10 BUILT IN BIAS RESISTANCE RATIO IS 10 BUILT IN BIAS RESISTANCE RATIO IS 10
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 80 80 80
JESD-30 code R-PDSO-F3 R-PDSO-F3 O-PBCY-T3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR ROUND
Package form SMALL OUTLINE SMALL OUTLINE CYLINDRICAL
Polarity/channel type PNP PNP PNP
surface mount YES YES NO
Terminal form FLAT FLAT THROUGH-HOLE
Terminal location DUAL DUAL BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz
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