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DTA143ZSA-C

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size464KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

DTA143ZSA-C Overview

Small Signal Bipolar Transistor

DTA143ZSA-C Parametric

Parameter NameAttribute value
MakerSECOS
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompliant
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 10
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
DTA143ZM / DTA143ZE
DTA143ZUA / DTA143ZCA / DTA143ZSA
Elektronische Bauelemente
PNP Digital Transistors (Built-in Resistors)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
Only the on/off conditions need to be set for
operation, making device design easy.
DTA143ZE (SOT-523)
DTA143ZUA(SOT-323)
Addreviated symbol:E13
DTA143ZM (SOT-723)
Addreviated symbol:113
DTA143ZCA (SOT-23)
EQUIVALENT CIRCUIT
Addreviated symbol:E13
DTA143ZSA (TO-92S)
Addreviated symbol:E13
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise noted)
Parameter
Supply Voltage
Input voltage
Output current
Power dissipation
Junction & Storage temperature
Symbol
V
CC
V
IN
I
O
P
D
T
J
, T
STG
Limits (DTA143Z□)
M
E
UA
-50
-30 ~ 5
-100
100
150
200
150, -55~150
300
CA
SA
Unit
V
V
mA
mW
°C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-May-2012 Rev. B
Page 1 of 2

DTA143ZSA-C Related Products

DTA143ZSA-C DTA143ZM DTA143ZM-C
Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor
Maker SECOS SECOS SECOS
package instruction CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code compliant compliant compliant
Other features BUILT IN BIAS RESISTANCE RATIO IS 10 BUILT IN BIAS RESISTANCE RATIO IS 10 BUILT IN BIAS RESISTANCE RATIO IS 10
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 80 80 80
JESD-30 code O-PBCY-T3 R-PDSO-F3 R-PDSO-F3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND RECTANGULAR RECTANGULAR
Package form CYLINDRICAL SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP
surface mount NO YES YES
Terminal form THROUGH-HOLE FLAT FLAT
Terminal location BOTTOM DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz
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