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ES2D

Description
2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size230KB,2 Pages
ManufacturerSY
Websitehttp://www.shunyegroup.com/
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ES2D Overview

2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA

ES2D Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionGREEN, PLASTIC, SMB, 2 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingPURE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum reverse recovery time0.0350 us
Maximum repetitive peak reverse voltage200 V
Maximum average forward current2 A
Maximum non-repetitive peak forward current50 A
ES2A THRU ES2J
SURFACE MOUNT SUPER FAST RECTIFIER
Reverse Voltage -
50 to 600 Volts
DO-214AA
Forward Current -
2.0 Amperes
FEATURES
0.086 (2.20)
0.077 (1.95)
0.155(3.94)
0.130(3.30)
0.180(4.57)
0.160(4.06)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Super fast switching for high efficiency
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.012(0.305)
0.006(0.152)
0.122(3.12)
0.110(2.82)
MECHANICAL DATA
Case:
JEDEC DO-214AA molded plastic body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.005
ounce, 0.138 grams
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.220(5.59)
0.205(5.21)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
ES2A ES2B ES2C
ES2D ES2E
ES2G
ES2J
UNITS
VOLTS
VOLTS
VOLTS
Amps
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
150
105
150
200
140
200
2.0
300
210
300
400
280
400
600
420
600
I
FSM
V
F
I
R
t
rr
C
J
R
q
JA
T
J
,
T
STG
0.95
50.0
1.25
5.0
50.0
35
60.0
40.0
-65 to +150
Amps
Volts
u
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
www.shunyegroup.com

ES2D Related Products

ES2D ES2A ES2B ES2C ES2E ES2J
Description 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 50 V, SILICON, RECTIFIER DIODE RECTIFIER DIODE 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 300 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA

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