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FQI13N50

Description
500V N-Channel MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size622KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

FQI13N50 Overview

500V N-Channel MOSFET

FQI13N50 Parametric

Parameter NameAttribute value
MakerFairchild
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
Avalanche Energy Efficiency Rating (Eas)810 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)12.5 A
Maximum drain-source on-resistance0.43 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)50 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
FQB13N50 / FQI13N50
March 2001
QFET
FQB13N50 / FQI13N50
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
resistance,
provide
superior
switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power
factor correction, and electronic lamp ballast based on half
bridge.
D
TM
Features
12.5A, 500V. R
DS(on)
= 0.43Ω @V
GS
= 10 V
Low gate charge ( typical 45 nC).
Low Crss ( typical 25 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
D
!
G
S
G
!
D
2
-PAK
FQB Series
G D S
I
2
-PAK
FQI Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQB13N50 / FQI13N50
500
12.5
7.9
50
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
810
12.5
17
4.5
3.13
170
1.35
-55 to +150
300
T
J
, T
STG
T
L
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
0.74
40
62.5
Units
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Rev. A, March 2001
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