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LMUN2131T1

Description
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size185KB,12 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
Download Datasheet Parametric View All

LMUN2131T1 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon,

LMUN2131T1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)8
Number of components1
Polarity/channel typePNP
Maximum power dissipation(Abs)0.338 W
surface mountYES
Transistor component materialsSILICON
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external
resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by integrating them into a single
device. The use of a BRT can reduce both system cost and board space. The device is housed
in the SC–59 package which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Moisture Sensitivity Level: 1
• ESD Rating – Human Body Model: Class 1
ESD Rating
– Machine Model: Class B
• The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during soldering eliminating the
possibility of damage to the die.
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
DEVICE MARKING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
ORDERING INFORMATION
*See device marking table on page 2 of this data sheet.
LMUN2111T1
SERIES
3
2
1
SC–59
CASE 318D, PLASTIC
PIN 2
BASE
(INPUT)
R
1
PIN 3
COLLECTOR
(OUTPUT)
R
2
PIN 1
EMITTER
(GROUND)
MARKINGDIAGRAM
6X
M
6X = Specific Device Code*
M = Date Code
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Symbol
V
CBO
V
CEO
I
C
Symbol
P
D
Value
50
50
100
Unit
Vdc
Vdc
mAdc
Max
230(Note 1)
338(Note 2)
1.8 (Note 1)
2.7 (Note 2)
540(Note 1)
370(Note 2)
264(Note 1)
287(Note 2)
–55 to +150
Unit
mW
°C/W
°C/W
°C/W
°C
R
θJA
R
θJL
T
J
, T
stg
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