PN201 datasheet, PDF - EEWORLD Datasheet

PN201: DescriptionTRANSISTOR 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size320KB，10 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com

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PN201 Overview

TRANSISTOR 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	National Semiconductor（TI ）
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
Collector-based maximum capacity	6 pF
Collector-emitter maximum voltage	65 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.4 V

	PN201	MPQ2907	PN4888	PN4889	PN4142
Description	TRANSISTOR 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal	TRANSISTOR 0.6 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116, BIP General Purpose Power	TRANSISTOR,BJT,PNP,150V V(BR)CEO,100MA I(C),TO-92	TRANSISTOR,BJT,PNP,150V V(BR)CEO,100MA I(C),TO-92	TRANSISTOR,BJT,PNP,40V V(BR)CEO,200MA I(C),TO-92
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	unknown	unknown	compliant
Configuration	SINGLE	SEPARATE, 4 ELEMENTS	Single	Single	Single
JESD-609 code	e0	e0	e0	e0	e0
Polarity/channel type	PNP	PNP	PNP	PNP	PNP
surface mount	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	100 MHz	200 MHz	30 MHz	40 MHz	200 MHz
Maker	National Semiconductor（TI ）	National Semiconductor（TI ）	-	National Semiconductor（TI ）	National Semiconductor（TI ）
Minimum DC current gain (hFE)	50	100	40	-	120
Maximum collector current (IC)	-	0.6 A	0.1 A	0.1 A	0.2 A
Maximum operating temperature	-	150 °C	150 °C	150 °C	-
Base Number Matches	-	1	1	1	-
Maximum power dissipation(Abs)	-	-	0.625 W	0.625 W	0.625 W

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