TRANSISTOR 0.6 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116, BIP General Purpose Power
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | National Semiconductor（TI ） |
| package instruction | IN-LINE, R-PDIP-T14 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Maximum collector current (IC) | 0.6 A |
| Collector-based maximum capacity | 8 pF |
| Collector-emitter maximum voltage | 40 V |
| Configuration | SEPARATE, 4 ELEMENTS |
| Minimum DC current gain (hFE) | 100 |
| JEDEC-95 code | TO-116 |
| JESD-30 code | R-PDIP-T14 |
| JESD-609 code | e0 |
| Number of components | 4 |
| Number of terminals | 14 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Maximum power consumption environment | 0.9 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 200 MHz |
| Maximum off time (toff) | 290 ns |
| Maximum opening time (tons) | 45 ns |
| VCEsat-Max | 0.4 V |
| Base Number Matches | 1 |
| MPQ2907 | PN4888 | PN4889 | PN201 | PN4142 | |
|---|---|---|---|---|---|
| Description | TRANSISTOR 0.6 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116, BIP General Purpose Power | TRANSISTOR,BJT,PNP,150V V(BR)CEO,100MA I(C),TO-92 | TRANSISTOR,BJT,PNP,150V V(BR)CEO,100MA I(C),TO-92 | TRANSISTOR 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal | TRANSISTOR,BJT,PNP,40V V(BR)CEO,200MA I(C),TO-92 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | unknown | unknown | unknown | unknown | compliant |
| Configuration | SEPARATE, 4 ELEMENTS | Single | Single | SINGLE | Single |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 |
| Polarity/channel type | PNP | PNP | PNP | PNP | PNP |
| surface mount | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Nominal transition frequency (fT) | 200 MHz | 30 MHz | 40 MHz | 100 MHz | 200 MHz |
| Maker | National Semiconductor（TI ） | - | National Semiconductor（TI ） | National Semiconductor（TI ） | National Semiconductor（TI ） |
| Maximum collector current (IC) | 0.6 A | 0.1 A | 0.1 A | - | 0.2 A |
| Minimum DC current gain (hFE) | 100 | 40 | - | 50 | 120 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | - | - |
| Base Number Matches | 1 | 1 | 1 | - | - |
| Maximum power dissipation(Abs) | - | 0.625 W | 0.625 W | - | 0.625 W |
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