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PB32G

Description
Bridge Rectifier Diode, 1 Phase, 3A, 600V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size116KB,1 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

PB32G Overview

Bridge Rectifier Diode, 1 Phase, 3A, 600V V(RRM), Silicon,

PB32G Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDiodes
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeS-PUFM-W4
JESD-609 codee0
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
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