Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PMBD914
Single high-speed switching diode
Rev. 06 — 11 February 2009
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a
small Surface-Mounted Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
PMBD914
PMBD914/DG
[1]
/DG: halogen-free
Type number
[1]
JEDEC
TO-236AB
SOT23
1.2 Features
I
High switching speed: t
rr
≤
4 ns
I
Low leakage current
I
Repetitive peak reverse voltage:
V
RRM
≤
100 V
I
Low capacitance: C
d
≤
1.5 pF
I
Reverse voltage: V
R
≤
100 V
I
Small SMD plastic package
1.3 Applications
I
High-speed switching
1.4 Quick reference data
Table 2.
Symbol
I
F
V
R
t
rr
[1]
[2]
Quick reference data
Parameter
forward current
reverse voltage
reverse recovery time
[2]
Conditions
[1]
Min
-
-
-
Typ
-
-
-
Max
215
100
4
Unit
mA
V
ns
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
NXP Semiconductors
PMBD914
Single high-speed switching diode
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
anode
not connected
cathode
1
2
3
1
3
2
006aaa764
Simplified outline
Graphic symbol
3. Ordering information
Table 4.
Ordering information
Package
Name
PMBD914
PMBD914/DG
[1]
/DG: halogen-free
Type number
[1]
Description
plastic surface-mounted package; 3 leads
Version
SOT23
-
4. Marking
Table 5.
PMBD914
PMBD914/DG
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
*5D
YB*
Type number
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
R
I
F
I
FRM
I
FSM
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
square wave
t
p
= 1
µs
t
p
= 1 ms
t
p
= 1 s
PMBD914_6
Conditions
Min
-
-
[1]
Max
100
100
215
500
Unit
V
V
mA
mA
-
-
[2]
-
-
-
4
1
0.5
A
A
A
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 11 February 2009
2 of 10
NXP Semiconductors
PMBD914
Single high-speed switching diode
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
T
j
T
stg
[1]
[2]
[3]
Parameter
total power dissipation
junction temperature
storage temperature
Conditions
T
amb
≤
25
°C
[1][3]
Min
-
-
−65
Max
250
150
+150
Unit
mW
°C
°C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
T
j
= 25
°C
prior to surge.
Soldering point of cathode tab.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
R
th(j-t)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
500
330
Unit
K/W
K/W
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Soldering point of cathode tab.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
V
R
= 25 V
V
R
= 75 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 75 V; T
j
= 150
°C
C
d
t
rr
V
FR
[1]
[2]
Min
-
-
-
-
-
-
-
-
-
[1]
[2]
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
715
855
1
1.25
25
1
30
50
1.5
4
1.75
Unit
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
diode capacitance
reverse recovery time
forward recovery voltage
f = 1 MHz; V
R
= 0 V
-
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
When switched from I
F
= 10 mA; t
r
= 20 ns.
PMBD914_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 11 February 2009
3 of 10
NXP Semiconductors
PMBD914
Single high-speed switching diode
300
I
F
(mA)
(1)
(2)
(3)
mbg382
10
2
I
FSM
(A)
10
mbg704
200
100
1
0
10
−1
0
1
V
F
(V)
2
1
10
10
2
10
3
t
p
(µs)
10
4
(1) T
amb
= 150
°C;
typical values
(2) T
amb
= 25
°C;
typical values
(3) T
amb
= 25
°C;
maximum values
Based on square wave currents.
T
j
= 25
°C;
prior to surge
Fig 1.
Forward current as a function of forward
voltage
mga884
Fig 2.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
mbg446
10
5
0.8
C
d
(pF)
I
R
(nA)
10
4
(1)
0.6
10
3
(2)
0.4
(3)
10
2
0.2
10
0
0
100
T
j
(
°C
)
200
0
4
8
12
V
R
(V)
16
(1) V
R
= 75 V; maximum values
(2) V
R
= 75 V; typical values
(3) V
R
= 25 V; typical values
f = 1 MHz; T
amb
= 25
°C
Fig 3.
Reverse current as a function of junction
temperature
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
PMBD914_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 11 February 2009
4 of 10
京公网安备 11010802033920号
EEWORLD
