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SMAJ16A

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size435KB,4 Pages
ManufacturerSY
Websitehttp://www.shunyegroup.com/
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SMAJ16A Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC

SMAJ5.0 THRU SMAJ170CA
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Stand-off Voltage:
5.0-170 Volts
DO-214AC
Peak pulse power:
300 Watts
FEATURE
0.087 (2.21)
0.070 (1.80)
0.110(2.80)
0.100(2.54)
0.177(4.50)
0.157(3.99)
0.012(0.305)
0.006(0.152)
A
Optimzed for LAN protection applications
Ideal for ESD protection of data lines in accordance
with IEC 1000-4-2(IEC801-2)
Ideal for EFT protection of data lines in accordance
with IEC1000-4-4(IEC801-2)
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Glass passivated junction
300w peak pulse power capability
Excellent clamping capability
Low incremental surge resistance
Fast response time:typically less than 1.0ps from 0v to
V
(BR)
min
High temperature soldering guaranteed:
250 C/10S at terminals
0.060(1.52)
0.030(0.76)
MECHANICAL DATA
0.008(0.203)MAX.
0.222(5.66)
0.194(4.93)
SMA
SMA(H)
A:
0.096(2.42)
0.078(1.98)
0.122(3.12)
0.110(2.82)
Dimensions in inches and (millimeters)
Case:
JEDEC DO-214AC molded plastic body over
passivated chip
Terminals:
Solder plated , solderable per MIL-STD 750,
method 2026
Polarity:
Color band denotes cathode except for
bidirectional types
Mounting Position:
Any
Weight:
0.003 ounce, 0.093 grams
0.004 ounce, 0.111 grams SMA(H)
DEVICES FOR BIDIRECTIONAL APPLICATIONS
For bidirectional use suffix C or CA for types SMAJ5.0 thru SMAJ170 (e.g. SMAJ5.0C,SMAJ170CA)
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
SYMBOLS
Peak pulse power dissipation with a 10/1000ms wavetorm(NOTE 1,2,5,FIG.1)
Peak forward surge current
(Note 4)
Peak pulse current with a 10/1000ms waveform(NOTE 1)
Steady state power dissapation (Note 3)
Maximum instantaneous forward voltage at 25A(Note 4)
Operating junction and storage temperature range
Notes:
1.Non-repetitive current pulse,per Fig.3 and derated above T
A
=25 C per Fig.2
2.Mounted on 5.0mm
2
copper pads to each terminal
3.Lead temperature at T
L
=75 C per Fig.5
4.Measured on 8.3ms single half sine-wine.For uni-directional devices only.
5.Peak pulse power waveform is 10/1000ms
P
PPM
I
FSM
I
PPM
P
M(AV)
V
F
T
STG
,T
J
VALUE
Minimum 300
40.0
See Table 1
1.0
3.5
-55 to + 150
UNITS
Watts
Amps
Amps
Watts
Volts
C
www.shunyegroup.com
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