SSM9475M
N-channel Enhancement-mode Power MOSFET
D
Simple drive requirement
Lower gate charge
Fast switching characteristics
G
S
BV
DSS
R
DS(ON)
I
D
60V
40mΩ
6.9A
DESCRIPTION
D
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SSM9475M is in the SO-8 package, which is widely preferred for
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters.
D
D
D
G
SO-8
S
S
S
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
GS
I
D
@ T
A
=25°C
I
D
@ T
A
=100°C
I
DM
P
D
@ T
A
=25°C
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
±
25
6.9
5.5
30
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
THERMAL DATA
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
50
Unit
°C/W
3/21/2005 Rev.2.01
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SSM9475M
ELECTRICAL CHARACTERISTICS @ T
j
= 25 C (unless otherwise specified)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=1mA
Min.
60
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.073
-
-
-
10
-
-
-
19
5
10
11
6
35
10
160
116
1.58
Max. Units
-
-
40
50
3
-
1
25
±100
30
-
-
-
-
-
-
-
-
-
V
V/°C
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
o
∆
BV
DSS
/
∆
Tj
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Breakdown Voltage Temperature Coefficient
Reference to 25
°C,
I
D
=1mA
V
GS
=10V, I
D
=6A
V
GS
=4.5V, I
D
=4A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=6A
V
DS
=60V, V
GS
=0V
V
DS
=48V, V
GS
=0V
V
GS
=±25V
I
D
=6A
V
DS
=48V
V
GS
=4.5V
V
DS
=30V
I
D
=1A
R
G
=3.3Ω
,V
GS
=10V
R
D
=30Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1670 2670
SOURCE-DRAIN DIODE
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=2A, V
GS
=0V
I
S
=6A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
34
50
Max. Units
1.2
-
-
V
ns
nC
t
rr
Q
rr
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125°C/W when mounted on min. copper pad.
3/21/2005 Rev.2.01
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SSM9475M
100
80
T
A
=25 C
I
D
, Drain Current (A)
80
o
10V
6.0V
I
D
, Drain Current (A)
70
T
A
= 150
o
C
10V
6.0V
60
50
60
5.0V
4.5V
5.0V
4.5V
40
40
30
20
20
V
G
=3.0V
V
G
=3.0V
10
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
46
1.6
44
I
D
=4A
T
A
=25°C
Normalized R
DS(ON)
1.4
I
D
=6A
V
G
=10V
42
R
DS(ON)
(mΩ )
1.2
40
38
1.0
36
0.8
34
32
3
5
7
9
11
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
1.50
6
5
Normalized V
GS(th)
(V)
1.25
4
I
S
(A)
3
1.00
T
j
=150
o
C
2
T
j
=25
o
C
0.75
1
0
0
0.2
0.4
0.6
0.8
1
1.2
0.50
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
3/21/2005 Rev.2.01
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM9475M
f=1.0MHz
14
10000
I
D
=6A
12
V
GS
, Gate to Source Voltage (V)
10
V
DS
= 30 V
V
DS
= 38 V
V
DS
= 48 V
C (pF)
1000
C
iss
8
6
4
2
C
oss
C
rss
100
0
10
20
30
40
50
1
5
9
13
17
21
25
29
0
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
0.2
10
1ms
I
D
(A)
1
0.1
0.1
0.05
10ms
100ms
0.1
0.02
0.01
P
DM
0.01
t
T
Single Pulse
T
A
=25 C
Single Pulse
0.01
0.1
1
10
o
1s
DC
100
1000
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 125°C/W
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
3/21/2005 Rev.2.01
Fig 12. Gate Charge Waveform
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SSM9475M
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
3/21/2005 Rev.2.01
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