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UF3J

Description
3 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size309KB,2 Pages
ManufacturerSY
Websitehttp://www.shunyegroup.com/
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UF3J Overview

3 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AB

Reverse Voltage - 50 to 1000 Volts
DO-214AB
SURFACE MOUNT ULTRA FAST RECTIFIER
FEATURES
UF3A THRU UF3M
Forward Current - 3.0 Amperes
0.126 (3.20)
0.114 (2.90)
0.245(6.22)
0.220(5.59)
0.280(7.11)
0.260(6.60)
0.012(0.305)
0.006(0.152)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
Glass passivated chip junction
0.103(2.62)
0.079(2.06)
MECHANICAL DATA
Case:
JEDEC DO-214AB molded plastic body over passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.007
ounce, 0.25grams
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.320(8.13)
0.305(7.75)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
UF3A UF3B UF3D
UF3G UF3J
UF3K UF3M
UNITS
VOLTS
VOLTS
VOLTS
Amps
Amps
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
50
35
50
100
70
100
200
140
200
400
280
400
3.0
100.0
600
420
600
800
560
800
1000
700
1000
1.0
1.4
5.0
100.0
1.7
Volts
µ
A
50
75
47.0
-65 to +150
100
63
ns
pF
C/W
C
R
θ
JA
T
J
,
T
STG
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
www.shunyegroup.com

UF3J Related Products

UF3J UF3A UF3D UF3K UF3B UF3G UF3M
Description 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, SILICON, RECTIFIER DIODE, DO-214AB 3 A, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB
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