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BTB08-800S

Description
TRIAC,800V V(DRM),8A I(T)RMS,TO-220
CategoryAnalog mixed-signal IC    Trigger device   
File Size188KB,4 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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BTB08-800S Overview

TRIAC,800V V(DRM),8A I(T)RMS,TO-220

BTB08-800S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
package instruction,
Reach Compliance Codenot_compliant
Critical rise rate of commutation voltage - minimum value1 V/us
Critical rise rate of minimum off-state voltage10 V/us
Maximum DC gate trigger current10 mA
Maximum DC gate trigger voltage2.5 V
Maximum holding current25 mA
JESD-609 codee0
Maximum leakage current0.5 mA
Maximum on-state voltage1.7 V
Maximum operating temperature110 °C
Minimum operating temperature-40 °C
Maximum rms on-state current8 A
Off-state repetitive peak voltage800 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Trigger device typeTRIAC

BTB08-800S Related Products

BTB08-800S BTA08-200S BTB08-200S
Description TRIAC,800V V(DRM),8A I(T)RMS,TO-220 TRIAC,200V V(DRM),8A I(T)RMS,TO-220 TRIAC,200V V(DRM),8A I(T)RMS,TO-220
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code not_compliant not_compliant not_compliant
Critical rise rate of commutation voltage - minimum value 1 V/us 1 V/us 1 V/us
Critical rise rate of minimum off-state voltage 10 V/us 10 V/us 10 V/us
Maximum DC gate trigger current 10 mA 10 mA 10 mA
Maximum DC gate trigger voltage 2.5 V 2.5 V 2.5 V
Maximum holding current 25 mA 25 mA 25 mA
JESD-609 code e0 e0 e0
Maximum leakage current 0.5 mA 0.5 mA 0.5 mA
Maximum on-state voltage 1.7 V 1.7 V 1.7 V
Maximum operating temperature 110 °C 110 °C 110 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Maximum rms on-state current 8 A 8 A 8 A
Off-state repetitive peak voltage 800 V 200 V 200 V
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Trigger device type TRIAC TRIAC TRIAC
Maker STMicroelectronics - STMicroelectronics
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