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BDT61C

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size238KB,9 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BDT61C Overview

Transistor,

BDT61C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)4 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)750
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)50 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)10 MHz
This Material Copyrighted By Its Respective Manufacturer

BDT61C Related Products

BDT61C BDT61A BDT61B
Description Transistor, Transistor, Transistor,
Is it Rohs certified? incompatible incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 4 A 4 A 4 A
Configuration DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 750 750 750
JESD-609 code e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 50 W 50 W 50 W
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 10 MHz 10 MHz 10 MHz
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